CSD16325Q5 Tech Spezifikatioune
Texas Instruments - CSD16325Q5 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Texas Instruments - CSD16325Q5
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Texas Instruments | |
Vgs (th) (Max) @ Id | 1.4V @ 250µA | |
Vgs (Max) | +10V, -8V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | 8-VSON-CLIP (5x6) | |
Serie | NexFET™ | |
Rds On (Max) @ Id, Vgs | 2mOhm @ 30A, 8V | |
Power Dissipation (Max) | 3.1W (Ta) | |
Package / Case | 8-PowerTDFN | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 4000 pF @ 12.5 V | |
Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 4.5 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 3V, 8V | |
Entworf fir Source Voltage (Vdss) | 25 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 33A (Ta), 100A (Tc) | |
Basis Produktnummer | CSD16325 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Texas Instruments CSD16325Q5.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | CSD16325Q5 | CSD16323Q3 | CSD16340Q3T | CSD16327Q3 |
Hiersteller | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Vgs (th) (Max) @ Id | 1.4V @ 250µA | 1.4V @ 250µA | 1.1V @ 250µA | 1.4V @ 250µA |
Entworf fir Source Voltage (Vdss) | 25 V | 25 V | 25 V | 25 V |
Supplier Device Package | 8-VSON-CLIP (5x6) | 8-VSON-CLIP (3.3x3.3) | 8-VSON-CLIP (3.3x3.3) | 8-VSON-CLIP (3.3x3.3) |
Input Capacitance (Ciss) (Max) @ Vds | 4000 pF @ 12.5 V | 1300 pF @ 12.5 V | 1350 pF @ 12.5 V | 1300 pF @ 12.5 V |
Rds On (Max) @ Id, Vgs | 2mOhm @ 30A, 8V | 4.5mOhm @ 24A, 8V | 4.5mOhm @ 20A, 8V | 4mOhm @ 24A, 8V |
Serie | NexFET™ | NexFET™ | NexFET™ | NexFET™ |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 33A (Ta), 100A (Tc) | 21A (Ta), 60A (Tc) | 60A (Tc) | 60A (Tc) |
Basis Produktnummer | CSD16325 | CSD16323 | CSD16340 | CSD16327 |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Fuert Volt (Max Rds On, Min Rds On) | 3V, 8V | 3V, 8V | 2.5V, 8V | 3V, 8V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
FET Feature | - | - | - | - |
Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 4.5 V | 8.4 nC @ 4.5 V | 9.2 nC @ 4.5 V | 8.4 nC @ 4.5 V |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Power Dissipation (Max) | 3.1W (Ta) | 3W (Ta) | 3W (Ta) | 3W (Ta) |
Vgs (Max) | +10V, -8V | +10V, -8V | +10V, -8V | +10V, -8V |
Package / Case | 8-PowerTDFN | 8-PowerTDFN | 8-PowerTDFN | 8-PowerTDFN |
Eroflueden CSD16325Q5 PDF DataDhusts an Texas Instruments Dokumentatioun fir CSD16325Q5 - Texas Instruments.
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DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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