US6J12TCR Tech Spezifikatioune
Rohm Semiconductor - US6J12TCR technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Rohm Semiconductor - US6J12TCR
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | LAPIS Technology | |
| Vgs (th) (Max) @ Id | 1V @ 1mA | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TUMT6 | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 105mOhm @ 2A, 4.5V | |
| Power - Max | 910mW (Ta) | |
| Package / Case | 6-SMD, Flat Leads | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 850pF @ 6V | |
| Gate Charge (Qg) (Max) @ Vgs | 7.6nC @ 4.5V | |
| FET Feature | - | |
| Entworf fir Source Voltage (Vdss) | 12V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 2A (Ta) | |
| Konfiguratioun | 2 P-Channel (Dual) | |
| Basis Produktnummer | US6J12 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Rohm Semiconductor US6J12TCR.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | US6J12TCR | US6J2TR | US6K2TR | US6K1TR |
| Hiersteller | Rohm Semiconductor | Rohm Semiconductor | Rohm Semiconductor | Rohm Semiconductor |
| Input Capacitance (Ciss) (Max) @ Vds | 850pF @ 6V | 150pF @ 10V | 70pF @ 10V | 80pF @ 10V |
| Operatioun Temperatur | 150°C (TJ) | 150°C (TJ) | 150°C (TJ) | 150°C (TJ) |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 2A (Ta) | 1A | 1.4A | 1.5A |
| Rds On (Max) @ Id, Vgs | 105mOhm @ 2A, 4.5V | 390mOhm @ 1A, 4.5V | 240mOhm @ 1.4A, 10V | 240mOhm @ 1.5A, 4.5V |
| Power - Max | 910mW (Ta) | 1W | 1W | 1W |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| FET Feature | - | Logic Level Gate | Logic Level Gate | Logic Level Gate |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Vgs (th) (Max) @ Id | 1V @ 1mA | 2V @ 1mA | 2.5V @ 1mA | 1.5V @ 1mA |
| Serie | - | - | - | - |
| Basis Produktnummer | US6J12 | US6J2 | US6K2 | US6K1 |
| Supplier Device Package | TUMT6 | TUMT6 | TUMT6 | TUMT6 |
| Entworf fir Source Voltage (Vdss) | 12V | 20V | 30V | 30V |
| Package / Case | 6-SMD, Flat Leads | 6-SMD, Flat Leads | 6-SMD, Flat Leads | 6-SMD, Flat Leads |
| Gate Charge (Qg) (Max) @ Vgs | 7.6nC @ 4.5V | 2.1nC @ 4.5V | 2nC @ 5V | 2.2nC @ 4.5V |
| Konfiguratioun | 2 P-Channel (Dual) | 2 P-Channel (Dual) | 2 N-Channel (Dual) | 2 N-Channel (Dual) |
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US63EVK MLX90250CBMelexisUS6J11TRRohm SemiconductorMOSFET 2P-CH 12V 1.3A TUMT6US6J2/TRLAPIS Technology| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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