TT8U2TR Tech Spezifikatioune
Rohm Semiconductor - TT8U2TR technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Rohm Semiconductor - TT8U2TR
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | LAPIS Technology | |
Vgs (th) (Max) @ Id | 1V @ 1mA | |
Vgs (Max) | ±10V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | 8-TSST | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 105mOhm @ 2.4A, 4.5V | |
Power Dissipation (Max) | 1.25W (Ta) | |
Package / Case | 8-SMD, Flat Lead | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 850 pF @ 10 V | |
Gate Charge (Qg) (Max) @ Vgs | 6.7 nC @ 4.5 V | |
FET Typ | P-Channel | |
FET Feature | Schottky Diode (Isolated) | |
Fuert Volt (Max Rds On, Min Rds On) | 1.5V, 4.5V | |
Entworf fir Source Voltage (Vdss) | 20 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 2.4A (Ta) | |
Basis Produktnummer | TT8U2 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Rohm Semiconductor TT8U2TR.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | TT8U2TR | TT8U1TR | TT8J11TCR | TT8U2FU7TR |
Hiersteller | Rohm Semiconductor | Rohm Semiconductor | Rohm Semiconductor | LAPIS Technology |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | - |
Serie | - | - | - | - |
Vgs (Max) | ±10V | ±10V | - | - |
Power Dissipation (Max) | 1.25W (Ta) | 1.25W (Ta) | - | - |
Basis Produktnummer | TT8U2 | TT8U1 | TT8J11 | - |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | - |
Rds On (Max) @ Id, Vgs | 105mOhm @ 2.4A, 4.5V | 105mOhm @ 2.4A, 4.5V | 43mOhm @ 3.5A, 4.5V | - |
FET Feature | Schottky Diode (Isolated) | Schottky Diode (Isolated) | Logic Level Gate, 1.5V Drive | - |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 2.4A (Ta) | 2.4A (Ta) | 3.5A | - |
Supplier Device Package | 8-TSST | 8-TSST | 8-TSST | - |
Operatioun Temperatur | 150°C (TJ) | 150°C (TJ) | 150°C (TJ) | - |
Fuert Volt (Max Rds On, Min Rds On) | 1.5V, 4.5V | 1.5V, 4.5V | - | - |
Gate Charge (Qg) (Max) @ Vgs | 6.7 nC @ 4.5 V | 6.7 nC @ 4.5 V | 22nC @ 4.5V | - |
Vgs (th) (Max) @ Id | 1V @ 1mA | 1V @ 1mA | 1V @ 1mA | - |
FET Typ | P-Channel | P-Channel | - | - |
Entworf fir Source Voltage (Vdss) | 20 V | 20 V | 12V | - |
Input Capacitance (Ciss) (Max) @ Vds | 850 pF @ 10 V | 850 pF @ 10 V | 2600pF @ 6V | - |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | - |
Package / Case | 8-SMD, Flat Lead | 8-SMD, Flat Lead | 8-SMD, Flat Lead | - |
Eroflueden TT8U2TR PDF DataDhusts an Rohm Semiconductor Dokumentatioun fir TT8U2TR - Rohm Semiconductor.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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