SP8M8TB Tech Spezifikatioune
Rohm Semiconductor - SP8M8TB technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Rohm Semiconductor - SP8M8TB
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | LAPIS Technology | |
| Vgs (th) (Max) @ Id | 2.5V @ 1mA | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | 8-SOP | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 6A, 10V | |
| Power - Max | 2W | |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 520pF @ 10V | |
| Gate Charge (Qg) (Max) @ Vgs | 7.2nC @ 5V | |
| FET Feature | Logic Level Gate | |
| Entworf fir Source Voltage (Vdss) | 30V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 6A, 4.5A | |
| Konfiguratioun | N and P-Channel | |
| Basis Produktnummer | SP8M8 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Rohm Semiconductor SP8M8TB.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | SP8M8TB | SP8M8FD5TB1 | SP8M6TB | SP8M70TB1 |
| Hiersteller | Rohm Semiconductor | Rohm Semiconductor | Rohm Semiconductor | Rohm Semiconductor |
| Vgs (th) (Max) @ Id | 2.5V @ 1mA | 2.5V @ 1mA | 2.5V @ 1mA | 4V @ 1mA |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Supplier Device Package | 8-SOP | 8-SOP | 8-SOP | 8-SOP |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 6A, 4.5A | 6A (Ta), 4.5A (Ta) | 5A, 3.5A | 3A, 2.5A |
| Entworf fir Source Voltage (Vdss) | 30V | 30V | 30V | 250V |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 6A, 10V | 30mOhm @ 6A, 10V, 56mOhm @ 4.5A, 10V | 51mOhm @ 5A, 10V | 1.63Ohm @ 1.5A, 10V |
| Power - Max | 2W | 2W (Ta) | 2W | 650mW |
| Gate Charge (Qg) (Max) @ Vgs | 7.2nC @ 5V | 7.2nC @ 5V, 8.5nC @ 5V | 3.9nC @ 5V | 5.2nC @ 10V |
| FET Feature | Logic Level Gate | Logic Level Gate, 4V Drive | Logic Level Gate | - |
| Input Capacitance (Ciss) (Max) @ Vds | 520pF @ 10V | 520pF @ 10V, 850pF @ 10V | 230pF @ 10V | 180pF @ 25V |
| Serie | - | - | - | - |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) |
| Konfiguratioun | N and P-Channel | N and P-Channel | N and P-Channel | N and P-Channel |
| Operatioun Temperatur | 150°C (TJ) | 150°C | 150°C (TJ) | 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Basis Produktnummer | SP8M8 | SP8M8 | SP8M6 | SP8M7 |
Eroflueden SP8M8TB PDF DataDhusts an Rohm Semiconductor Dokumentatioun fir SP8M8TB - Rohm Semiconductor.
SP8M8FD5TB1Rohm SemiconductorMOSFET N/P-CH 30V 8SOP
SP8U46GETB1LAPIS TechnologySP8M70TB1 MOSLAPIS TechnologySP8M8TB1LAPIS TechnologySP8M8 FD5TBLAPIS TechnologySP8U21LAPIS TechnologySP8M8-TB.LAPIS TechnologySP8M6TBRohm SemiconductorMOSFET N/P-CH 30V 5A/3.5A 8SOICSP8U46LAPIS Technology
SP8M8-TBSP8M70TB1Rohm SemiconductorMOSFET N/P-CH 250V 3A/2.5A 8SOICSP8U36TB1LAPIS TechnologySP8M7TBRohm SemiconductorMOSFET N/P-CH 30V 5A/7A 8SOICSP8M8FTBLAPIS TechnologySP8M8F5DTB1LAPIS TechnologySP8M8FD5TBLAPIS TechnologySP8M7-TBVBSEMISP8M8 F TBLAPIS Technology| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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