SP8K80TB1 Tech Spezifikatioune
Rohm Semiconductor - SP8K80TB1 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Rohm Semiconductor - SP8K80TB1
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | LAPIS Technology | |
| Vgs (th) (Max) @ Id | 5V @ 1mA | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | 8-SOP | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 11.7Ohm @ 250mA, 10V | |
| Power - Max | 2W (Ta) | |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | - | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 23.5pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 3.8nC @ 10V | |
| FET Feature | - | |
| Entworf fir Source Voltage (Vdss) | 500V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 500mA (Ta) | |
| Konfiguratioun | 2 N-Channel (Dual) | |
| Basis Produktnummer | SP8K80 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Rohm Semiconductor SP8K80TB1.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | SP8K80TB1 | SP8M10TB | SP8K80 | SP8M1FU7TB |
| Hiersteller | Rohm Semiconductor | Rohm Semiconductor | LAPIS Technology | LAPIS Technology |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 500mA (Ta) | 7A, 4.5A | - | - |
| Mounting Type | Surface Mount | Surface Mount | - | - |
| Entworf fir Source Voltage (Vdss) | 500V | 30V | - | - |
| Operatioun Temperatur | - | 150°C (TJ) | - | - |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | - | - |
| Supplier Device Package | 8-SOP | 8-SOP | - | - |
| Vgs (th) (Max) @ Id | 5V @ 1mA | 2.5V @ 1mA | - | - |
| Konfiguratioun | 2 N-Channel (Dual) | N and P-Channel | - | - |
| Power - Max | 2W (Ta) | 2W | - | - |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | - | - |
| FET Feature | - | Logic Level Gate | - | - |
| Serie | - | - | - | - |
| Input Capacitance (Ciss) (Max) @ Vds | 23.5pF @ 25V | 600pF @ 10V | - | - |
| Gate Charge (Qg) (Max) @ Vgs | 3.8nC @ 10V | 8.4nC @ 5V | - | - |
| Basis Produktnummer | SP8K80 | SP8M10 | - | - |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | - | - |
| Rds On (Max) @ Id, Vgs | 11.7Ohm @ 250mA, 10V | 25mOhm @ 7A, 10V | - | - |
SP8K80LAPIS TechnologySP8M1FU7TBLAPIS TechnologySP8K70 FU7TBLAPIS TechnologySP8K80MGTB1LAPIS TechnologySP8K70FU7TBLAPIS TechnologySP8K64TB1LAPIS TechnologySP8M10TBRohm SemiconductorMOSFET N/P-CH 30V 7A/4.5A 8SOIC
SP8M2-TBVBSEMISP8K67-TBVBSEMISP8K64FU7TB1LAPIS TechnologySP8M10LAPIS TechnologySP8K64FU7TBLAPIS TechnologySP8K64TBLAPIS TechnologySP8M2-TB.LAPIS TechnologySP8M10FRALAPIS TechnologySP8M21-TBVBSEMISP8M2 FT1TBROHM/PBFSP8M21FRALAPIS Technology| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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