SP8K31TB1 Tech Spezifikatioune
Rohm Semiconductor - SP8K31TB1 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Rohm Semiconductor - SP8K31TB1
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | LAPIS Technology | |
| Vgs (th) (Max) @ Id | 2.5V @ 1mA | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | 8-SOP | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 120mOhm @ 3.5A, 10V | |
| Power - Max | 2W | |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 250pF @ 10V | |
| Gate Charge (Qg) (Max) @ Vgs | 5.2nC @ 5V | |
| FET Feature | Logic Level Gate | |
| Entworf fir Source Voltage (Vdss) | 60V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 3.5A | |
| Konfiguratioun | 2 N-Channel (Dual) | |
| Basis Produktnummer | SP8K31 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Rohm Semiconductor SP8K31TB1.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | SP8K31TB1 | SP8K31FRATB | SP8K32FRATB | SP8K2TB |
| Hiersteller | Rohm Semiconductor | Rohm Semiconductor | Rohm Semiconductor | Rohm Semiconductor |
| Input Capacitance (Ciss) (Max) @ Vds | 250pF @ 10V | 250pF @ 10V | 500pF @ 10V | 520pF @ 10V |
| Konfiguratioun | 2 N-Channel (Dual) | 2 N-Channel (Dual) | 2 N-Channel (Dual) | 2 N-Channel (Dual) |
| Serie | - | Automotive, AEC-Q101 | Automotive, AEC-Q101 | - |
| Basis Produktnummer | SP8K31 | SP8K31 | SP8K32 | SP8K2 |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) |
| Operatioun Temperatur | 150°C (TJ) | 150°C | 150°C (TJ) | 150°C (TJ) |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Vgs (th) (Max) @ Id | 2.5V @ 1mA | 2.5V @ 1mA | 2.5V @ 1mA | 2.5V @ 1mA |
| Rds On (Max) @ Id, Vgs | 120mOhm @ 3.5A, 10V | 120mOhm @ 3.5A, 10V | 65mOhm @ 4.5A, 10V | 30mOhm @ 6A, 10V |
| Power - Max | 2W | 2W | 2W | 2W |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Entworf fir Source Voltage (Vdss) | 60V | 60V | 60V | 30V |
| Gate Charge (Qg) (Max) @ Vgs | 5.2nC @ 5V | 5.2nC @ 5V | 10nC @ 5V | 10.1nC @ 5V |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 3.5A | 3.5A (Ta) | 4.5A (Ta) | 6A |
| FET Feature | Logic Level Gate | - | - | Logic Level Gate |
| Supplier Device Package | 8-SOP | 8-SOP | 8-SOP | 8-SOP |
Eroflueden SP8K31TB1 PDF DataDhusts an Rohm Semiconductor Dokumentatioun fir SP8K31TB1 - Rohm Semiconductor.
SP8K31FRATBRohm Semiconductor4V DRIVE NCH+NCH MOSFET (CORRESP
SP8K32-TBVBSEMISP8K32FRATBRohm Semiconductor4V DRIVE NCH+NCH MOSFET (CORRESP
SP8K31-TBLAPIS TechnologySP8K32LAPIS TechnologySP8K2FT1TBLAPIS TechnologySP8K31FRALAPIS TechnologySP8K3-TBVBSEMISP8K32FRA TBLAPIS TechnologySP8K33TBLAPIS TechnologySP8K2TBRohm SemiconductorMOSFET 2N-CH 30V 6A 8-SOICSP8K31LAPIS TechnologySP8K33FRALAPIS TechnologySP8K31FRA MOSLAPIS TechnologySP8K2FU6TBRohm SemiconductorMOSFET 2N-CH 30V 6A 8SOICSP8K33LAPIS TechnologySP8K33-TBLAPIS TechnologySP8K32TB1Rohm SemiconductorMOSFET 2N-CH 60V 8SOP| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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