SP8K22FU6TB Tech Spezifikatioune
Rohm Semiconductor - SP8K22FU6TB technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Rohm Semiconductor - SP8K22FU6TB
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | LAPIS Technology | |
| Vgs (th) (Max) @ Id | 2.5V @ 1mA | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | 8-SOP | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 46mOhm @ 4.5A, 10V | |
| Power - Max | 2W | |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 550pF @ 10V | |
| Gate Charge (Qg) (Max) @ Vgs | 9.6nC @ 5V | |
| FET Feature | Logic Level Gate | |
| Entworf fir Source Voltage (Vdss) | 45V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 4.5A | |
| Konfiguratioun | 2 N-Channel (Dual) | |
| Basis Produktnummer | SP8K22 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Rohm Semiconductor SP8K22FU6TB.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | SP8K22FU6TB | SP8K2FU6TB | SP8K1TB | SP8K24 |
| Hiersteller | Rohm Semiconductor | Rohm Semiconductor | Rohm Semiconductor | LAPIS Technology |
| Rds On (Max) @ Id, Vgs | 46mOhm @ 4.5A, 10V | 30mOhm @ 6A, 10V | 51mOhm @ 5A, 10V | - |
| Supplier Device Package | 8-SOP | 8-SOP | 8-SOP | - |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | - |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 4.5A | 6A | 5A | - |
| Operatioun Temperatur | 150°C (TJ) | 150°C (TJ) | 150°C (TJ) | - |
| Konfiguratioun | 2 N-Channel (Dual) | 2 N-Channel (Dual) | 2 N-Channel (Dual) | - |
| Power - Max | 2W | 2W | 2W | - |
| Basis Produktnummer | SP8K22 | SP8K2 | SP8K1 | - |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | - |
| Gate Charge (Qg) (Max) @ Vgs | 9.6nC @ 5V | 10.1nC @ 5V | 5.5nC @ 5V | - |
| Input Capacitance (Ciss) (Max) @ Vds | 550pF @ 10V | 520pF @ 10V | 230pF @ 10V | - |
| Vgs (th) (Max) @ Id | 2.5V @ 1mA | 2.5V @ 1mA | 2.5V @ 1mA | - |
| Entworf fir Source Voltage (Vdss) | 45V | 30V | 30V | - |
| FET Feature | Logic Level Gate | Logic Level Gate | Logic Level Gate | - |
| Serie | - | - | - | - |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | - |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | - |
Eroflueden SP8K22FU6TB PDF DataDhusts an Rohm Semiconductor Dokumentatioun fir SP8K22FU6TB - Rohm Semiconductor.
SP8K24LAPIS TechnologySP8K23TBLAPIS TechnologySP8K2FU6TBRohm SemiconductorMOSFET 2N-CH 30V 6A 8SOICSP8K2-TB.LAPIS TechnologySP8K24FRA MOSLAPIS TechnologySP8K24FRALAPIS TechnologySP8K22TBLAPIS TechnologySP8K1TBRohm SemiconductorMOSFET 2N-CH 30V 5A 8-SOICSP8K22LAPIS TechnologySP8K1TB MOSLAPIS Technology
SP8K22-TBVBSEMISP8K2-TBVBSEMISP8K22 TBLAPIS TechnologySP8K2FT1TBLAPIS TechnologySP8K2 TBLAPIS TechnologySP8K22FRALAPIS TechnologySP8K24-TBVBSEMISP8K22FU7TBLAPIS Technology| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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