SCS312AHGC9 Tech Spezifikatioune
Rohm Semiconductor - SCS312AHGC9 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Rohm Semiconductor - SCS312AHGC9
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | LAPIS Technology | |
| Voltage - DC Reverse (Vr) (Max) | 650 V | |
| Technologie | SiC (Silicon Carbide) Schottky | |
| Supplier Device Package | TO-220ACP | |
| Speed | No Recovery Time > 500mA (Io) | |
| Serie | - | |
| Reverse Recovery Time (trr) | 0 ns | |
| Package / Case | TO-220-2 |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package protegéieren | Tube | |
| Operatiounstemperatur - Junction | 175°C (Max) | |
| Mounting Type | Through Hole | |
| Aktuell - Reverse Leakage @ Vr | 60 µA @ 650 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 12A | |
| Capacitance @ Vr, F. | 600pF @ 1V, 1MHz | |
| Basis Produktnummer | SCS312 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Rohm Semiconductor SCS312AHGC9.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | SCS312AHGC9 | SCS315AHGC9 | SCS315AMC | SCS310AHGC9 |
| Hiersteller | Rohm Semiconductor | Rohm Semiconductor | Rohm Semiconductor | Rohm Semiconductor |
| Capacitance @ Vr, F. | 600pF @ 1V, 1MHz | 750pF @ 1V, 1MHz | 750pF @ 1V, 1MHz | 500pF @ 1V, 1MHz |
| Voltage - DC Reverse (Vr) (Max) | 650 V | 650 V | 650 V | 650 V |
| Speed | No Recovery Time > 500mA (Io) | No Recovery Time > 500mA (Io) | No Recovery Time > 500mA (Io) | No Recovery Time > 500mA (Io) |
| Operatiounstemperatur - Junction | 175°C (Max) | 175°C (Max) | 175°C (Max) | 175°C (Max) |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Package protegéieren | Tube | Tube | Tube | Tube |
| Package / Case | TO-220-2 | TO-220-2 | TO-220-2 Full Pack | TO-220-2 |
| Basis Produktnummer | SCS312 | SCS315 | SCS315 | SCS310 |
| Serie | - | - | - | - |
| Reverse Recovery Time (trr) | 0 ns | 0 ns | 0 ns | 0 ns |
| Aktuell - Reverse Leakage @ Vr | 60 µA @ 650 V | 75 µA @ 650 V | 75 µA @ 650 V | 50 µA @ 650 V |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 12A | 15A | 15A | 10A |
| Supplier Device Package | TO-220ACP | TO-220ACP | TO-220FM | TO-220ACP |
| Technologie | SiC (Silicon Carbide) Schottky | SiC (Silicon Carbide) Schottky | SiC (Silicon Carbide) Schottky | SiC (Silicon Carbide) Schottky |
SCS411D-TGWILLASSCS306AWLAPIS TechnologySCS315AHGC9Rohm SemiconductorDIODE SIL CARB 650V 15A TO220ACPSCS315AMCRohm SemiconductorDIODE SIL CARB 650V 15A TO220FMSCS310AHGC9Rohm SemiconductorDIODE SIL CARB 650V 10A TO220ACPSCS38157FD01R2MOTOROLASCS355VSECOSSCS308AHGC9Rohm SemiconductorDIODE SIL CARB 650V 8A TO220ACPSCS304AHGC9Rohm SemiconductorDIODE SIL CARB 650V 4A TO220ACPSCS310AMCRohm SemiconductorDIODE SIL CARB 650V 10A TO220FMSCS4805S1IPDIGBT ModuleSCS320AMCRohm SemiconductorDIODE SIL CARB 650V 20A TO220FMSCS320AHGC9Rohm SemiconductorDIODE SIL CARB 650V 20A TO220ACPSCS2HA0.1A-AMITSUBISHIIGBT ModuleSCS302AHGC9Rohm SemiconductorDIODE SIC 650V 2.15A TO220ACPSCS308APC9Rohm SemiconductorDIODE SILICON CARBIDE 650V 8ASCS306AHGC9Rohm SemiconductorDIODE SIL CARB 650V 6A TO220ACPSCS320AJTLLRohm SemiconductorDIODE SIL CARBIDE 650V 20A LPTL| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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