SCS106AGC Tech Spezifikatioune
Rohm Semiconductor - SCS106AGC technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Rohm Semiconductor - SCS106AGC
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | LAPIS Technology | |
| Voltage - Viru (Vf) (Max) @ Wann | 1.5 V @ 6 A | |
| Voltage - DC Reverse (Vr) (Max) | 600 V | |
| Technologie | SiC (Silicon Carbide) Schottky | |
| Supplier Device Package | TO-220AC | |
| Speed | No Recovery Time > 500mA (Io) | |
| Serie | - | |
| Reverse Recovery Time (trr) | 0 ns |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package / Case | TO-220-2 | |
| Package protegéieren | Tube | |
| Operatiounstemperatur - Junction | 175°C (Max) | |
| Mounting Type | Through Hole | |
| Aktuell - Reverse Leakage @ Vr | 120 µA @ 600 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 6A | |
| Capacitance @ Vr, F. | 260pF @ 1V, 1MHz | |
| Basis Produktnummer | SCS106 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Rohm Semiconductor SCS106AGC.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | SCS106AGC | SCS110AGC | SCS105KGC | SCS095N04H |
| Hiersteller | Rohm Semiconductor | Rohm Semiconductor | Rohm Semiconductor | CHMC |
| Package protegéieren | Tube | Tube | Tube | - |
| Speed | No Recovery Time > 500mA (Io) | No Recovery Time > 500mA (Io) | No Recovery Time > 500mA (Io) | - |
| Basis Produktnummer | SCS106 | SCS110 | SCS105 | - |
| Mounting Type | Through Hole | Through Hole | Through Hole | - |
| Operatiounstemperatur - Junction | 175°C (Max) | 175°C (Max) | 175°C (Max) | - |
| Voltage - Viru (Vf) (Max) @ Wann | 1.5 V @ 6 A | 1.7 V @ 10 A | 1.75 V @ 5 A | - |
| Package / Case | TO-220-2 | TO-220-2 | TO-220-2 | - |
| Voltage - DC Reverse (Vr) (Max) | 600 V | 600 V | 1200 V | - |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 6A | 10A | 5A | - |
| Capacitance @ Vr, F. | 260pF @ 1V, 1MHz | 430pF @ 1V, 1MHz | 325pF @ 1V, 1MHz | - |
| Serie | - | - | - | - |
| Technologie | SiC (Silicon Carbide) Schottky | SiC (Silicon Carbide) Schottky | SiC (Silicon Carbide) Schottky | - |
| Reverse Recovery Time (trr) | 0 ns | 0 ns | 0 ns | - |
| Aktuell - Reverse Leakage @ Vr | 120 µA @ 600 V | 200 µA @ 600 V | 100 µA @ 1200 V | - |
| Supplier Device Package | TO-220AC | TO-220AC | TO-220AC | - |
Eroflueden SCS106AGC PDF DataDhusts an Rohm Semiconductor Dokumentatioun fir SCS106AGC - Rohm Semiconductor.
SCS095N04HCHMCSCS110AGCRohm SemiconductorDIODE SIL CARB 600V 10A TO220ACSCS120AE2CRohm SemiconductorDIODE ARRAY SCHOTTKY 600V TO247SCS110KE2LAPIS TechnologySCS120AGLAPIS TechnologySCS105KGCRohm SemiconductorDIODE SIL CARB 1.2KV 5A TO220ACSCS08C24L07BRIGHTKINGSCS08C12L07BRIGHTKINGSCS1100PMSVSCS090N06HCHMCSCS110AMLAPIS TechnologySCS106AGLAPIS TechnologySCS085N10HCHMCSCS08C05L07BRIGHTKINGSCS120AE2LAPIS TechnologySCS110AGLAPIS TechnologySCS08C15L07BRIGHTKIN
SCS110KE2CLAPIS SemiconductorDIODE ARRAY SCHOTTKY 1200V TO247| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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