RYE002N05TCL Tech Spezifikatioune
Rohm Semiconductor - RYE002N05TCL technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Rohm Semiconductor - RYE002N05TCL
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | LAPIS Technology | |
| Vgs (th) (Max) @ Id | 800mV @ 1mA | |
| Vgs (Max) | ±8V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | EMT3 | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 2.2Ohm @ 200mA, 4.5V | |
| Power Dissipation (Max) | 150mW (Ta) | |
| Package / Case | SC-75, SOT-416 | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 26 pF @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 0.9V, 4.5V | |
| Entworf fir Source Voltage (Vdss) | 50 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 200mA (Ta) | |
| Basis Produktnummer | RYE002 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Rohm Semiconductor RYE002N05TCL.
| Produktiounsattriff |  |
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 |
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|---|---|---|---|---|
| Part Number | RYE002N05TCL | IRF7809A | IRFB13N50APBF | FDP20AN06A0 |
| Hiersteller | Rohm Semiconductor | Infineon Technologies | Vishay Siliconix | onsemi |
| Package / Case | SC-75, SOT-416 | 8-SOIC (0.154", 3.90mm Width) | TO-220-3 | TO-220-3 |
| Mounting Type | Surface Mount | Surface Mount | Through Hole | Through Hole |
| Input Capacitance (Ciss) (Max) @ Vds | 26 pF @ 10 V | 7300 pF @ 16 V | 1910 pF @ 25 V | 950 pF @ 25 V |
| Vgs (Max) | ±8V | ±12V | ±30V | ±20V |
| Package protegéieren | Tape & Reel (TR) | Tube | Tube | Tube |
| Basis Produktnummer | RYE002 | - | IRFB13 | FDP20 |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 200mA (Ta) | 14.5A (Ta) | 14A (Tc) | 9A (Ta), 45A (Tc) |
| Power Dissipation (Max) | 150mW (Ta) | 2.5W (Ta) | 250W (Tc) | 90W (Tc) |
| Serie | - | HEXFET® | - | PowerTrench® |
| Vgs (th) (Max) @ Id | 800mV @ 1mA | 1V @ 250µA | 4V @ 250µA | 4V @ 250µA |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Rds On (Max) @ Id, Vgs | 2.2Ohm @ 200mA, 4.5V | 8.5mOhm @ 15A, 4.5V | 450mOhm @ 8.4A, 10V | 20mOhm @ 45A, 10V |
| FET Feature | - | - | - | - |
| Fuert Volt (Max Rds On, Min Rds On) | 0.9V, 4.5V | 4.5V | 10V | 10V |
| Supplier Device Package | EMT3 | 8-SO | TO-220AB | TO-220-3 |
| Operatioun Temperatur | 150°C (TJ) | - | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) |
| Entworf fir Source Voltage (Vdss) | 50 V | 30 V | 500 V | 60 V |
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IPD65R380C6ATMA1Infineon TechnologiesMOSFET N-CH 650V 10.6A TO252-3| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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