RV3C002UNT2CL Tech Spezifikatioune
Rohm Semiconductor - RV3C002UNT2CL technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Rohm Semiconductor - RV3C002UNT2CL
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | LAPIS Technology | |
| Vgs (th) (Max) @ Id | 1V @ 100µA | |
| Vgs (Max) | ±10V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | VML0604 | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 2Ohm @ 150mA, 4.5V | |
| Power Dissipation (Max) | 100mW (Ta) | |
| Package / Case | 3-XFDFN | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 12 pF @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 1.5V, 4.5V | |
| Entworf fir Source Voltage (Vdss) | 20 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 150mA (Ta) | |
| Basis Produktnummer | RV3C002 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Rohm Semiconductor RV3C002UNT2CL.
| Produktiounsattriff |  |
 |
 |
 |
|---|---|---|---|---|
| Part Number | RV3C002UNT2CL | FDW256P | RV3CA01ZPT2CL | IPA50R650CE |
| Hiersteller | Rohm Semiconductor | onsemi | Rohm Semiconductor | Infineon Technologies |
| Power Dissipation (Max) | 100mW (Ta) | 1.3W (Ta) | 100mW (Ta) | 27.2W (Tc) |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 150mA (Ta) | 8A (Ta) | 100mA (Ta) | 6.1A (Tc) |
| Rds On (Max) @ Id, Vgs | 2Ohm @ 150mA, 4.5V | 13.5mOhm @ 8A, 10V | 3.8Ohm @ 100mA, 4.5V | 650mOhm @ 1.8A, 13V |
| Fuert Volt (Max Rds On, Min Rds On) | 1.5V, 4.5V | 4.5V, 10V | 1.5V, 4.5V | 13V |
| Input Capacitance (Ciss) (Max) @ Vds | 12 pF @ 10 V | 2267 pF @ 15 V | 7.5 pF @ 10 V | 342 pF @ 100 V |
| Basis Produktnummer | RV3C002 | FDW25 | RV3CA01 | IPA50R |
| FET Feature | - | - | - | - |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Through Hole |
| Supplier Device Package | VML0604 | 8-TSSOP | VML0604 | PG-TO220-FP |
| FET Typ | N-Channel | P-Channel | P-Channel | N-Channel |
| Vgs (th) (Max) @ Id | 1V @ 100µA | 3V @ 250µA | 1V @ 100µA | 3.5V @ 150µA |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | 150°C (TJ) | -40°C ~ 150°C (TJ) |
| Serie | - | PowerTrench® | - | CoolMOS™ |
| Vgs (Max) | ±10V | ±25V | ±10V | ±20V |
| Entworf fir Source Voltage (Vdss) | 20 V | 30 V | 20 V | 500 V |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Package / Case | 3-XFDFN | 8-TSSOP (0.173", 4.40mm Width) | 3-XFDFN | TO-220-3 Full Pack |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tube |
Eroflueden RV3C002UNT2CL PDF DataDhusts an Rohm Semiconductor Dokumentatioun fir RV3C002UNT2CL - Rohm Semiconductor.
RV30YN20SB102TOCOSRV30YN20SB103TOCOSRV3CA01ZP T2CLLAPIS TechnologyRV3A-16R-V-BDIPRV30YN20SB204TOCOSRV3C002UN T2CLLAPIS TechnologyRV30YN20SB503TOCOSRV30YN20SB202TOCOSRV30YN20SB504TOCOSRV30YN20SB501TOCOSRV3AF-16R-V-BDIPFDW256PonsemiMOSFET P-CH 30V 8A 8TSSOPRV30YN20SB203TOCOSRV3A-10R-V-BDIPRV30YN20SB502TOCOSRV3CA01ZPT2CLRohm SemiconductorMOSFET P-CH 20V 100MA VML0604IPA50R650CEInfineon TechnologiesMOSFET N-CH 500V 6.1A TO220-FPRV30YN20SB104TOCOS| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
Wëllt Dir e bessere Präis? A WED AN AMFE NEW, MELLT DIR DIR NËMMEN.