RUF025N02TL Tech Spezifikatioune
Rohm Semiconductor - RUF025N02TL technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Rohm Semiconductor - RUF025N02TL
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | LAPIS Technology | |
Vgs (th) (Max) @ Id | 1.3V @ 1mA | |
Vgs (Max) | ±10V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TUMT3 | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 54mOhm @ 2.5A, 4.5V | |
Power Dissipation (Max) | 320mW (Ta) | |
Package / Case | 3-SMD, Flat Leads | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 370 pF @ 10 V | |
Gate Charge (Qg) (Max) @ Vgs | 5 nC @ 4.5 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 1.5V, 4.5V | |
Entworf fir Source Voltage (Vdss) | 20 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 2.5A (Ta) | |
Basis Produktnummer | RUF025 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Rohm Semiconductor RUF025N02TL.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | RUF025N02TL | IRF7450 | RUF020N02TL | SI4104DY-T1-E3 |
Hiersteller | Rohm Semiconductor | Infineon Technologies | Rohm Semiconductor | Vishay Siliconix |
Package protegéieren | Tape & Reel (TR) | Tube | Tape & Reel (TR) | Tape & Reel (TR) |
FET Feature | - | - | - | - |
Basis Produktnummer | RUF025 | - | RUF020 | SI4104 |
Entworf fir Source Voltage (Vdss) | 20 V | 200 V | 20 V | 100 V |
Gate Charge (Qg) (Max) @ Vgs | 5 nC @ 4.5 V | 39 nC @ 10 V | 2 nC @ 4.5 V | 13 nC @ 10 V |
Package / Case | 3-SMD, Flat Leads | 8-SOIC (0.154", 3.90mm Width) | 3-SMD, Flat Leads | 8-SOIC (0.154", 3.90mm Width) |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Fuert Volt (Max Rds On, Min Rds On) | 1.5V, 4.5V | 10V | 1.5V, 4.5V | 10V |
Serie | - | HEXFET® | - | TrenchFET® |
Supplier Device Package | TUMT3 | 8-SO | TUMT3 | 8-SOIC |
Vgs (th) (Max) @ Id | 1.3V @ 1mA | 5.5V @ 250µA | 1V @ 1mA | 4.5V @ 250µA |
Rds On (Max) @ Id, Vgs | 54mOhm @ 2.5A, 4.5V | 170mOhm @ 1.5A, 10V | 105mOhm @ 2A, 4.5V | 105mOhm @ 5A, 10V |
Input Capacitance (Ciss) (Max) @ Vds | 370 pF @ 10 V | 940 pF @ 25 V | 180 pF @ 10 V | 446 pF @ 50 V |
Operatioun Temperatur | 150°C (TJ) | -55°C ~ 150°C (TJ) | 150°C (TJ) | -55°C ~ 150°C (TJ) |
Power Dissipation (Max) | 320mW (Ta) | 2.5W (Ta) | 320mW (Ta) | 2.5W (Ta), 5W (Tc) |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 2.5A (Ta) | 2.5A (Ta) | 2A (Ta) | 4.6A (Tc) |
Vgs (Max) | ±10V | ±30V | ±10V | ±20V |
Eroflueden RUF025N02TL PDF DataDhusts an Rohm Semiconductor Dokumentatioun fir RUF025N02TL - Rohm Semiconductor.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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