RU1J002YNTCL Tech Spezifikatioune
Rohm Semiconductor - RU1J002YNTCL technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Rohm Semiconductor - RU1J002YNTCL
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | LAPIS Technology | |
| Vgs (th) (Max) @ Id | 800mV @ 1mA | |
| Vgs (Max) | ±8V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | UMT3F | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 2.2Ohm @ 200mA, 4.5V | |
| Power Dissipation (Max) | 150mW (Ta) | |
| Package / Case | SC-85 | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 26 pF @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 0.9V, 4.5V | |
| Entworf fir Source Voltage (Vdss) | 50 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 200mA (Ta) | |
| Basis Produktnummer | RU1J002 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Rohm Semiconductor RU1J002YNTCL.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | RU1J002YNTCL | RU1L002SNMGTL | RU1L002SNTL | RU1J002YN TL |
| Hiersteller | Rohm Semiconductor | Rohm Semiconductor | Rohm Semiconductor | LAPIS Technology |
| Operatioun Temperatur | 150°C (TJ) | - | 150°C (TJ) | - |
| FET Feature | - | - | - | - |
| Mounting Type | Surface Mount | - | Surface Mount | - |
| Rds On (Max) @ Id, Vgs | 2.2Ohm @ 200mA, 4.5V | - | 2.4Ohm @ 250mA, 10V | - |
| Basis Produktnummer | RU1J002 | - | RU1L002 | - |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 200mA (Ta) | - | 250mA (Ta) | - |
| FET Typ | N-Channel | - | N-Channel | - |
| Technologie | MOSFET (Metal Oxide) | - | MOSFET (Metal Oxide) | - |
| Input Capacitance (Ciss) (Max) @ Vds | 26 pF @ 10 V | - | 15 pF @ 25 V | - |
| Supplier Device Package | UMT3F | - | UMT3F | - |
| Vgs (th) (Max) @ Id | 800mV @ 1mA | - | 2.3V @ 1mA | - |
| Vgs (Max) | ±8V | - | ±20V | - |
| Serie | - | - | - | - |
| Fuert Volt (Max Rds On, Min Rds On) | 0.9V, 4.5V | - | 2.5V, 10V | - |
| Power Dissipation (Max) | 150mW (Ta) | - | 200mW (Ta) | - |
| Entworf fir Source Voltage (Vdss) | 50 V | - | 60 V | - |
| Package / Case | SC-85 | - | SC-85 | - |
| Package protegéieren | Tape & Reel (TR) | - | Tape & Reel (TR) | - |
Eroflueden RU1J002YNTCL PDF DataDhusts an Rohm Semiconductor Dokumentatioun fir RU1J002YNTCL - Rohm Semiconductor.
RU1J002YN TLLAPIS TechnologyRU1J002YN TCLLAPIS TechnologyRU1HL13RRUICHIPSRU1L002SNMGTLRohm SemiconductorMOSFET N-CH 2.5V DRIVE UMT3FRU1L002SN-TLLAPIS TechnologyRU1L002SNTLRohm SemiconductorMOSFET N-CH 60V 250MA UMT3FRU1L002SNLAPIS TechnologyRU1HP60SRuichipsRU1J002YNLAPIS TechnologyRU1L002SLAPIS TechnologyRU1Z120RRU1HE4DRUICHIPSRU1HL13LRUICHIPSRU1HL8LRUICHIPSRU1HP60RRU1L002SN TLLAPIS TechnologyRU1Z200QRU1HP55R| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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