RTU002P02T106 Tech Spezifikatioune
Rohm Semiconductor - RTU002P02T106 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Rohm Semiconductor - RTU002P02T106
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | LAPIS Technology | |
| Vgs (th) (Max) @ Id | 2V @ 1mA | |
| Vgs (Max) | ±12V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | UMT3 | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 250mA, 4.5V | |
| Power Dissipation (Max) | 200mW (Ta) | |
| Package / Case | SC-70, SOT-323 | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 50 pF @ 10 V | |
| FET Typ | P-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 2.5V, 4.5V | |
| Entworf fir Source Voltage (Vdss) | 20 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 250mA (Ta) | |
| Basis Produktnummer | RTU002 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Rohm Semiconductor RTU002P02T106.
| Produktiounsattriff |  |
 |
 |
 |
|---|---|---|---|---|
| Part Number | RTU002P02T106 | CPH6443-TL-W | IXFC13N50 | STP7NK40Z |
| Hiersteller | Rohm Semiconductor | onsemi | IXYS | STMicroelectronics |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 250mA (Ta) | 6A (Ta) | 12A (Tc) | 5.4A (Tc) |
| Serie | - | - | HiPerFET™ | SuperMESH™ |
| Vgs (th) (Max) @ Id | 2V @ 1mA | 2.6V @ 1mA | 4V @ 2.5mA | 4.5V @ 50µA |
| Vgs (Max) | ±12V | ±20V | ±20V | ±30V |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Supplier Device Package | UMT3 | 6-CPH | ISOPLUS220™ | TO-220 |
| Package / Case | SC-70, SOT-323 | SOT-23-6 Thin, TSOT-23-6 | ISOPLUS220™ | TO-220-3 |
| Power Dissipation (Max) | 200mW (Ta) | 1.6W (Ta) | 140W (Tc) | 70W (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 50 pF @ 10 V | 470 pF @ 20 V | 2800 pF @ 25 V | 535 pF @ 25 V |
| Mounting Type | Surface Mount | Surface Mount | Through Hole | Through Hole |
| FET Feature | - | - | - | - |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 250mA, 4.5V | 37mOhm @ 3A, 10V | 400mOhm @ 6.5A, 10V | 1Ohm @ 2.7A, 10V |
| Fuert Volt (Max Rds On, Min Rds On) | 2.5V, 4.5V | 4V, 10V | 10V | 10V |
| Basis Produktnummer | RTU002 | CPH6443 | IXFC13N50 | STP7NK40 |
| FET Typ | P-Channel | N-Channel | N-Channel | N-Channel |
| Entworf fir Source Voltage (Vdss) | 20 V | 35 V | 500 V | 400 V |
| Operatioun Temperatur | 150°C (TJ) | 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tube | Tube |
Eroflueden RTU002P02T106 PDF DataDhusts an Rohm Semiconductor Dokumentatioun fir RTU002P02T106 - Rohm Semiconductor.
RTU002P02 T106LAPIS TechnologyRTU002P02LAPIS TechnologyRTU002P02FLAPIS TechnologyRTU002P02GZT106LAPIS TechnologyCPH6443-TL-WonsemiMOSFET N-CH 35V 6A 6CPHRTU7300REALTEKRTU7010-GRREALTEKRTU7305-GRREALTEKIXFC13N50IXYSMOSFET N-CH 500V 12A ISOPLUS220STP7NK40ZSTMicroelectronicsMOSFET N-CH 400V 5.4A TO220AB
IRFD110Vishay SiliconixMOSFET N-CH 100V 1A 4DIP
SI9410BDY-T1-GE3Vishay SiliconixMOSFET N-CH 30V 6.2A 8SORTU7300-GRREALTEKRTU7105-GRREALTEKRTU7012REALTEKRTU7305-VE-GRREALTEKRTU7010REALTEKRTU002P02F T106LAPIS Technology| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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