RTR020N05TL Tech Spezifikatioune
Rohm Semiconductor - RTR020N05TL technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Rohm Semiconductor - RTR020N05TL
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | LAPIS Technology | |
| Vgs (th) (Max) @ Id | 1.5V @ 1mA | |
| Vgs (Max) | ±12V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TSMT3 | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 2A, 4.5V | |
| Power Dissipation (Max) | 1W (Ta) | |
| Package / Case | SC-96 | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 200 pF @ 10 V | |
| Gate Charge (Qg) (Max) @ Vgs | 4.1 nC @ 4.5 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 2.5V, 4.5V | |
| Entworf fir Source Voltage (Vdss) | 45 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 2A (Ta) | |
| Basis Produktnummer | RTR020 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Rohm Semiconductor RTR020N05TL.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | RTR020N05TL | RTR020N05HZGTL | RTR020P02TL | RTR020N05 |
| Hiersteller | Rohm Semiconductor | Rohm Semiconductor | Rohm Semiconductor | LAPIS Technology |
| FET Feature | - | - | - | - |
| Serie | - | Automotive, AEC-Q101 | - | - |
| Package / Case | SC-96 | SC-96 | SC-96 | - |
| FET Typ | N-Channel | N-Channel | P-Channel | - |
| Basis Produktnummer | RTR020 | RTR020 | RTR020 | - |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | - |
| Supplier Device Package | TSMT3 | TSMT3 | TSMT3 | - |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | - |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 2A, 4.5V | 180mOhm @ 2A, 4.5V | 135mOhm @ 2A, 4.5V | - |
| Operatioun Temperatur | 150°C (TJ) | 150°C (TJ) | 150°C (TJ) | - |
| Vgs (th) (Max) @ Id | 1.5V @ 1mA | 1.5V @ 1mA | 2V @ 1mA | - |
| Vgs (Max) | ±12V | ±12V | ±12V | - |
| Entworf fir Source Voltage (Vdss) | 45 V | 45 V | 20 V | - |
| Fuert Volt (Max Rds On, Min Rds On) | 2.5V, 4.5V | 2.5V, 4.5V | 2.5V, 4.5V | - |
| Power Dissipation (Max) | 1W (Ta) | 700mW (Ta) | 1W (Ta) | - |
| Gate Charge (Qg) (Max) @ Vgs | 4.1 nC @ 4.5 V | 4.1 nC @ 4.5 V | 4.9 nC @ 4.5 V | - |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 2A (Ta) | 2A (Ta) | 2A (Ta) | - |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | - |
| Input Capacitance (Ciss) (Max) @ Vds | 200 pF @ 10 V | 200 pF @ 10 V | 430 pF @ 10 V | - |
Eroflueden RTR020N05TL PDF DataDhusts an Rohm Semiconductor Dokumentatioun fir RTR020N05TL - Rohm Semiconductor.
RTR020N05LAPIS TechnologyRTR020P02FRALAPIS TechnologyRTR020P02MGTLLAPIS TechnologyRTR020N05HZGTLRohm SemiconductorMOSFET N-CH 45V 2A TSMT3RTR020P02TLRohm SemiconductorMOSFET P-CH 20V 2A TSMT3RTR011P02FSLAPIS TechnologyRTR020N05TL MOSLAPIS TechnologyRTR020P02FRA MOSLAPIS Technology
RTR011P02GC ElectronicsRTR020P02TCLAPIS TechnologyRTR011P02 TLLAPIS TechnologyRTR020N05MGTLLAPIS TechnologyRTR020N05FRALAPIS TechnologyRTR020P02LAPIS TechnologyRTR020P02FRATLLAPIS TechnologyRTR011P02FSTLLAPIS TechnologyRTR020P02 TLLAPIS TechnologyRTR020N05 TLLAPIS Technology| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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