RSQ035N03TR Tech Spezifikatioune
Rohm Semiconductor - RSQ035N03TR technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Rohm Semiconductor - RSQ035N03TR
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | LAPIS Technology | |
Vgs (th) (Max) @ Id | 2.5V @ 1mA | |
Vgs (Max) | 20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TSMT6 (SC-95) | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 62mOhm @ 3.5A, 10V | |
Power Dissipation (Max) | 1.25W (Ta) | |
Package / Case | SOT-23-6 Thin, TSOT-23-6 | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 290 pF @ 10 V | |
Gate Charge (Qg) (Max) @ Vgs | 7.4 nC @ 5 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4V, 10V | |
Entworf fir Source Voltage (Vdss) | 30 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 3.5A (Ta) | |
Basis Produktnummer | RSQ035 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Rohm Semiconductor RSQ035N03TR.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | RSQ035N03TR | RSQ035P03TR | STN1NK60Z | RSQ025P03TR |
Hiersteller | Rohm Semiconductor | Rohm Semiconductor | STMicroelectronics | Rohm Semiconductor |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Supplier Device Package | TSMT6 (SC-95) | TSMT6 (SC-95) | SOT-223 | TSMT6 (SC-95) |
Entworf fir Source Voltage (Vdss) | 30 V | 30 V | 600 V | 30 V |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
FET Typ | N-Channel | P-Channel | N-Channel | P-Channel |
FET Feature | - | - | - | - |
Fuert Volt (Max Rds On, Min Rds On) | 4V, 10V | 4V, 10V | 10V | 4V, 10V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 3.5A (Ta) | 3.5A (Ta) | 300mA (Tc) | 2.5A (Ta) |
Package / Case | SOT-23-6 Thin, TSOT-23-6 | SOT-23-6 Thin, TSOT-23-6 | TO-261-4, TO-261AA | SOT-23-6 Thin, TSOT-23-6 |
Input Capacitance (Ciss) (Max) @ Vds | 290 pF @ 10 V | 780 pF @ 10 V | 94 pF @ 25 V | 320 pF @ 10 V |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Vgs (th) (Max) @ Id | 2.5V @ 1mA | 2.5V @ 1mA | 4.5V @ 50µA | 2.5V @ 1mA |
Operatioun Temperatur | 150°C (TJ) | 150°C (TJ) | -55°C ~ 150°C (TJ) | 150°C (TJ) |
Basis Produktnummer | RSQ035 | RSQ035 | STN1NK60 | RSQ025 |
Power Dissipation (Max) | 1.25W (Ta) | 1.25W (Ta) | 3.3W (Tc) | 1.25W (Ta) |
Vgs (Max) | 20V | ±20V | ±30V | ±20V |
Serie | - | - | SuperMESH™ | - |
Gate Charge (Qg) (Max) @ Vgs | 7.4 nC @ 5 V | 9.2 nC @ 5 V | 6.9 nC @ 10 V | 4.4 nC @ 5 V |
Rds On (Max) @ Id, Vgs | 62mOhm @ 3.5A, 10V | 65mOhm @ 3.5A, 10V | 15Ohm @ 400mA, 10V | 110mOhm @ 2.5A, 10V |
Eroflueden RSQ035N03TR PDF DataDhusts an Rohm Semiconductor Dokumentatioun fir RSQ035N03TR - Rohm Semiconductor.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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