RSJ250P10FRATL Tech Spezifikatioune
Rohm Semiconductor - RSJ250P10FRATL technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Rohm Semiconductor - RSJ250P10FRATL
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | LAPIS Technology | |
Vgs (th) (Max) @ Id | 2.5V @ 1mA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | LPTS | |
Serie | Automotive, AEC-Q101 | |
Rds On (Max) @ Id, Vgs | 63mOhm @ 25A, 10V | |
Power Dissipation (Max) | 50W (Ta) | |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | 150°C | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 8000 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 5 V | |
FET Typ | P-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4V, 10V | |
Entworf fir Source Voltage (Vdss) | 100 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 25A (Ta) | |
Basis Produktnummer | RSJ250 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Rohm Semiconductor RSJ250P10FRATL.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | RSJ250P10FRATL | C3M0075120D | STD60NF06T4 | FCPF380N60E |
Hiersteller | Rohm Semiconductor | Wolfspeed, Inc. | STMicroelectronics | Fairchild Semiconductor |
Package protegéieren | Tape & Reel (TR) | Tube | Tape & Reel (TR) | Bulk |
Vgs (th) (Max) @ Id | 2.5V @ 1mA | 4V @ 5mA | 4V @ 250µA | 3.5V @ 250µA |
Mounting Type | Surface Mount | Through Hole | Surface Mount | Through Hole |
Operatioun Temperatur | 150°C | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) |
Fuert Volt (Max Rds On, Min Rds On) | 4V, 10V | 15V | 10V | 10V |
Serie | Automotive, AEC-Q101 | C3M™ | STripFET™ II | SuperFET® II |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 25A (Ta) | 30A (Tc) | 60A (Tc) | 10.2A (Tc) |
Vgs (Max) | ±20V | +19V, -8V | ±20V | ±20V |
Basis Produktnummer | RSJ250 | C3M0075120 | STD60 | FCPF380 |
Input Capacitance (Ciss) (Max) @ Vds | 8000 pF @ 25 V | 1350 pF @ 1000 V | 1810 pF @ 25 V | 1770 pF @ 25 V |
Entworf fir Source Voltage (Vdss) | 100 V | 1200 V | 60 V | 600 V |
FET Typ | P-Channel | N-Channel | N-Channel | N-Channel |
Supplier Device Package | LPTS | TO-247-3 | DPAK | TO-220F |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-247-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-220-3 Full Pack |
Technologie | MOSFET (Metal Oxide) | SiCFET (Silicon Carbide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
FET Feature | - | - | - | - |
Power Dissipation (Max) | 50W (Ta) | 113.6W (Tc) | 110W (Tc) | 31W (Tc) |
Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 5 V | 54 nC @ 15 V | 66 nC @ 10 V | 45 nC @ 10 V |
Rds On (Max) @ Id, Vgs | 63mOhm @ 25A, 10V | 90mOhm @ 20A, 15V | 16mOhm @ 30A, 10V | 380mOhm @ 5A, 10V |
Eroflueden RSJ250P10FRATL PDF DataDhusts an Rohm Semiconductor Dokumentatioun fir RSJ250P10FRATL - Rohm Semiconductor.
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
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1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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