RSF014N03TL Tech Spezifikatioune
Rohm Semiconductor - RSF014N03TL technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Rohm Semiconductor - RSF014N03TL
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | LAPIS Technology | |
| Vgs (th) (Max) @ Id | 2.5V @ 1mA | |
| Vgs (Max) | 20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TUMT3 | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 240mOhm @ 1.4A, 10V | |
| Power Dissipation (Max) | 800mW (Ta) | |
| Package / Case | 3-SMD, Flat Leads | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 70 pF @ 10 V | |
| Gate Charge (Qg) (Max) @ Vgs | 2 nC @ 5 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 4V, 10V | |
| Entworf fir Source Voltage (Vdss) | 30 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 1.4A (Ta) | |
| Basis Produktnummer | RSF014 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Rohm Semiconductor RSF014N03TL.
| Produktiounsattriff |  |
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|
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|---|---|---|---|---|
| Part Number | RSF014N03TL | RSF015N06TL | RSF010P03TL | IRF135SA204 |
| Hiersteller | Rohm Semiconductor | Rohm Semiconductor | Rohm Semiconductor | Infineon Technologies |
| Vgs (Max) | 20V | ±20V | ±20V | ±20V |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| FET Feature | - | - | - | - |
| Rds On (Max) @ Id, Vgs | 240mOhm @ 1.4A, 10V | 290mOhm @ 1.5A, 10V | 350mOhm @ 1A, 10V | 5.9mOhm @ 96A, 10V |
| Fuert Volt (Max Rds On, Min Rds On) | 4V, 10V | 4V, 10V | 4V, 10V | 10V |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Entworf fir Source Voltage (Vdss) | 30 V | 60 V | 30 V | 135 V |
| Operatioun Temperatur | 150°C (TJ) | 150°C (TJ) | 150°C (TJ) | -55°C ~ 175°C (TJ) |
| Serie | - | - | - | HEXFET®, StrongIRFET™ |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 1.4A (Ta) | 1.5A (Ta) | 1A (Ta) | 160A (Tc) |
| Power Dissipation (Max) | 800mW (Ta) | 800mW (Ta) | 800mW (Ta) | 500W (Tc) |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Package / Case | 3-SMD, Flat Leads | 3-SMD, Flat Leads | 3-SMD, Flat Leads | TO-263-7, D²Pak (6 Leads + Tab) Variant |
| FET Typ | N-Channel | N-Channel | P-Channel | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 70 pF @ 10 V | 110 pF @ 10 V | 120 pF @ 10 V | 11690 pF @ 50 V |
| Supplier Device Package | TUMT3 | TUMT3 | TUMT3 | D2PAK-7 |
| Basis Produktnummer | RSF014 | RSF015 | RSF010 | IRF135 |
| Gate Charge (Qg) (Max) @ Vgs | 2 nC @ 5 V | 2 nC @ 5 V | 1.9 nC @ 5 V | 315 nC @ 10 V |
| Vgs (th) (Max) @ Id | 2.5V @ 1mA | 2.5V @ 1mA | - | 4V @ 250µA |
Eroflueden RSF014N03TL PDF DataDhusts an Rohm Semiconductor Dokumentatioun fir RSF014N03TL - Rohm Semiconductor.
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RSFJL RTGTaiwan Semiconductor CorporationDIODE GP 600V 500MA SUB SMARSF1WSJT-52-0R1YageoRSF16F2FHT106LAPIS TechnologyRSF010P05TLRohm SemiconductorMOSFET P-CH 45V 1A TUMT3RSF010P05LAPIS Technology| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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