RSC002P03T316 Tech Spezifikatioune
Rohm Semiconductor - RSC002P03T316 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Rohm Semiconductor - RSC002P03T316
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | LAPIS Technology | |
Vgs (th) (Max) @ Id | 2.5V @ 1mA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | SST3 | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 1.4Ohm @ 250mA, 10V | |
Power Dissipation (Max) | 200mW (Ta) | |
Package / Case | TO-236-3, SC-59, SOT-23-3 | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 30 pF @ 10 V | |
FET Typ | P-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4V, 10V | |
Entworf fir Source Voltage (Vdss) | 30 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 250mA (Ta) | |
Basis Produktnummer | RSC002 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Rohm Semiconductor RSC002P03T316.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | RSC002P03T316 | SSF6007 | IXFK150N15 | SI4463BDY-T1-E3 |
Hiersteller | Rohm Semiconductor | Good-Ark Semiconductor | IXYS | Vishay Siliconix |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
FET Typ | P-Channel | P-Channel | N-Channel | P-Channel |
Entworf fir Source Voltage (Vdss) | 30 V | 50 V | 150 V | 20 V |
Basis Produktnummer | RSC002 | - | IXFK150 | SI4463 |
Supplier Device Package | SST3 | SOT-23 | TO-264AA (IXFK) | 8-SOIC |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 250mA (Ta) | 130mA (Tc) | 150A (Tc) | 9.8A (Ta) |
Package / Case | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-264-3, TO-264AA | 8-SOIC (0.154", 3.90mm Width) |
Serie | - | - | HiPerFET™ | TrenchFET® |
Vgs (th) (Max) @ Id | 2.5V @ 1mA | 2V @ 1mA | 4V @ 8mA | 1.4V @ 250µA |
Power Dissipation (Max) | 200mW (Ta) | 230mW (Tc) | 560W (Tc) | 1.5W (Ta) |
Rds On (Max) @ Id, Vgs | 1.4Ohm @ 250mA, 10V | 7Ohm @ 130mA, 10V | 12.5mOhm @ 75A, 10V | 11mOhm @ 13.7A, 10V |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tube | Tape & Reel (TR) |
Fuert Volt (Max Rds On, Min Rds On) | 4V, 10V | 10V | 10V | 2.5V, 10V |
FET Feature | - | - | - | - |
Mounting Type | Surface Mount | Surface Mount | Through Hole | Surface Mount |
Vgs (Max) | ±20V | ±20V | ±20V | ±12V |
Operatioun Temperatur | 150°C (TJ) | -55°C ~ 150°C | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Input Capacitance (Ciss) (Max) @ Vds | 30 pF @ 10 V | 45 pF @ 5 V | 9100 pF @ 25 V | - |
Eroflueden RSC002P03T316 PDF DataDhusts an Rohm Semiconductor Dokumentatioun fir RSC002P03T316 - Rohm Semiconductor.
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
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1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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