RRR030P03TL Tech Spezifikatioune
Rohm Semiconductor - RRR030P03TL technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Rohm Semiconductor - RRR030P03TL
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | LAPIS Technology | |
Vgs (th) (Max) @ Id | 2.5V @ 1mA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TSMT3 | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 75mOhm @ 3A, 10V | |
Power Dissipation (Max) | 1W (Ta) | |
Package / Case | SC-96 | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 480 pF @ 10 V | |
Gate Charge (Qg) (Max) @ Vgs | 5.2 nC @ 5 V | |
FET Typ | P-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4V, 10V | |
Entworf fir Source Voltage (Vdss) | 30 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 3A (Ta) | |
Basis Produktnummer | RRR030 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Rohm Semiconductor RRR030P03TL.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | RRR030P03TL | IXFP16N50P | FQP65N06 | FQPF10N20C |
Hiersteller | Rohm Semiconductor | IXYS | onsemi | onsemi |
Operatioun Temperatur | 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) |
Power Dissipation (Max) | 1W (Ta) | 300W (Tc) | 150W (Tc) | 38W (Tc) |
Package / Case | SC-96 | TO-220-3 | TO-220-3 | TO-220-3 Full Pack |
Package protegéieren | Tape & Reel (TR) | Tube | Tube | Tube |
Fuert Volt (Max Rds On, Min Rds On) | 4V, 10V | 10V | 10V | 10V |
Vgs (th) (Max) @ Id | 2.5V @ 1mA | 5.5V @ 2.5mA | 4V @ 250µA | 4V @ 250µA |
FET Typ | P-Channel | N-Channel | N-Channel | N-Channel |
Input Capacitance (Ciss) (Max) @ Vds | 480 pF @ 10 V | 2250 pF @ 25 V | 2410 pF @ 25 V | 510 pF @ 25 V |
Entworf fir Source Voltage (Vdss) | 30 V | 500 V | 60 V | 200 V |
Basis Produktnummer | RRR030 | IXFP16 | FQP65 | FQPF10 |
Rds On (Max) @ Id, Vgs | 75mOhm @ 3A, 10V | 400mOhm @ 8A, 10V | 16mOhm @ 32.5A, 10V | 360mOhm @ 4.75A, 10V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 3A (Ta) | 16A (Tc) | 65A (Tc) | 9.5A (Tc) |
FET Feature | - | - | - | - |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Serie | - | HiPerFET™, Polar | QFET® | QFET® |
Supplier Device Package | TSMT3 | TO-220-3 | TO-220-3 | TO-220F-3 |
Gate Charge (Qg) (Max) @ Vgs | 5.2 nC @ 5 V | 43 nC @ 10 V | 65 nC @ 10 V | 26 nC @ 10 V |
Mounting Type | Surface Mount | Through Hole | Through Hole | Through Hole |
Vgs (Max) | ±20V | ±30V | ±25V | ±30V |
Eroflueden RRR030P03TL PDF DataDhusts an Rohm Semiconductor Dokumentatioun fir RRR030P03TL - Rohm Semiconductor.
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