RQ3E130MNTB1 Tech Spezifikatioune
Rohm Semiconductor - RQ3E130MNTB1 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Rohm Semiconductor - RQ3E130MNTB1
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | LAPIS Technology | |
| Vgs (th) (Max) @ Id | 2.5V @ 1mA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | 8-HSMT (3.2x3) | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 8.1mOhm @ 13A, 10V | |
| Power Dissipation (Max) | 2W (Ta) | |
| Package / Case | 8-PowerVDFN | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 840 pF @ 15 V | |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Entworf fir Source Voltage (Vdss) | 30 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 13A (Ta) | |
| Basis Produktnummer | RQ3E130 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Rohm Semiconductor RQ3E130MNTB1.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | RQ3E130MNTB1 | RQ3E120ATTB | RQ3E160ADTB | RQ3E120GNTB |
| Hiersteller | Rohm Semiconductor | Rohm Semiconductor | Rohm Semiconductor | Rohm Semiconductor |
| Operatioun Temperatur | 150°C (TJ) | 150°C (TJ) | 150°C (TJ) | 150°C (TJ) |
| Serie | - | - | - | - |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Input Capacitance (Ciss) (Max) @ Vds | 840 pF @ 15 V | 3200 pF @ 15 V | 2550 pF @ 15 V | 590 pF @ 15 V |
| FET Feature | - | - | - | - |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V | 62 nC @ 10 V | 51 nC @ 10 V | 10 nC @ 10 V |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Power Dissipation (Max) | 2W (Ta) | 2W (Ta) | 2W (Ta) | 2W (Ta), 16W (Tc) |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 13A (Ta) | 12A (Ta) | 16A (Ta) | 12A (Ta) |
| Vgs (th) (Max) @ Id | 2.5V @ 1mA | 2.5V @ 1mA | 2.5V @ 1mA | 2.5V @ 1mA |
| Supplier Device Package | 8-HSMT (3.2x3) | 8-HSMT (3.2x3) | 8-HSMT (3.2x3) | 8-HSMT (3.2x3) |
| Entworf fir Source Voltage (Vdss) | 30 V | 30 V | 30 V | 30 V |
| Rds On (Max) @ Id, Vgs | 8.1mOhm @ 13A, 10V | 8mOhm @ 12A, 10V | 4.5mOhm @ 16A, 10V | 8.8mOhm @ 12A, 10V |
| Basis Produktnummer | RQ3E130 | RQ3E120 | RQ3E160 | RQ3E120 |
| FET Typ | N-Channel | P-Channel | N-Channel | N-Channel |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
| Package / Case | 8-PowerVDFN | 8-PowerVDFN | 8-PowerVDFN | 8-PowerVDFN |
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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