RQ1C065UNTR Tech Spezifikatioune
Rohm Semiconductor - RQ1C065UNTR technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Rohm Semiconductor - RQ1C065UNTR
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | LAPIS Technology | |
Vgs (th) (Max) @ Id | 1V @ 1mA | |
Vgs (Max) | ±10V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TSMT8 | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 22mOhm @ 6.5A, 4.5V | |
Power Dissipation (Max) | 700mW (Ta) | |
Package / Case | 8-SMD, Flat Lead | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 870 pF @ 10 V | |
Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 4.5 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 1.5V, 4.5V | |
Entworf fir Source Voltage (Vdss) | 20 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 6.5A (Ta) | |
Basis Produktnummer | RQ1C065 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Rohm Semiconductor RQ1C065UNTR.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | RQ1C065UNTR | RQ1A070APTR | RQ1E050RPTR | RQ1A070ZPTR |
Hiersteller | Rohm Semiconductor | Rohm Semiconductor | Rohm Semiconductor | Rohm Semiconductor |
Package / Case | 8-SMD, Flat Lead | 8-SMD, Flat Lead | 8-SMD, Flat Lead | 8-SMD, Flat Lead |
Fuert Volt (Max Rds On, Min Rds On) | 1.5V, 4.5V | 1.5V, 4.5V | 4V, 10V | 1.5V, 4.5V |
Power Dissipation (Max) | 700mW (Ta) | 550mW (Ta) | 700mW (Ta) | 700mW (Ta) |
Entworf fir Source Voltage (Vdss) | 20 V | 12 V | 30 V | 12 V |
Vgs (th) (Max) @ Id | 1V @ 1mA | 1V @ 1mA | 2.5V @ 1mA | 1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 4.5 V | 80 nC @ 4.5 V | 28 nC @ 10 V | 58 nC @ 4.5 V |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
FET Feature | - | - | - | - |
FET Typ | N-Channel | P-Channel | P-Channel | P-Channel |
Vgs (Max) | ±10V | -8V | ±20V | ±10V |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Supplier Device Package | TSMT8 | TSMT8 | TSMT8 | TSMT8 |
Input Capacitance (Ciss) (Max) @ Vds | 870 pF @ 10 V | 7800 pF @ 6 V | 1300 pF @ 10 V | 7400 pF @ 6 V |
Rds On (Max) @ Id, Vgs | 22mOhm @ 6.5A, 4.5V | 14mOhm @ 7A, 4.5V | 31mOhm @ 5A, 10V | 12mOhm @ 7A, 4.5V |
Basis Produktnummer | RQ1C065 | RQ1A070 | RQ1E050 | RQ1A070 |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 6.5A (Ta) | 7A (Ta) | 5A (Ta) | 7A (Ta) |
Operatioun Temperatur | 150°C (TJ) | 150°C (TJ) | 150°C (TJ) | 150°C (TJ) |
Serie | - | - | - | - |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Eroflueden RQ1C065UNTR PDF DataDhusts an Rohm Semiconductor Dokumentatioun fir RQ1C065UNTR - Rohm Semiconductor.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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