RHP020N06T100 Tech Spezifikatioune
Rohm Semiconductor - RHP020N06T100 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Rohm Semiconductor - RHP020N06T100
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | LAPIS Technology | |
Vgs (th) (Max) @ Id | 2.5V @ 1mA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | MPT3 | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 200mOhm @ 2A, 10V | |
Power Dissipation (Max) | 500mW (Ta) | |
Package / Case | TO-243AA | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 140 pF @ 10 V | |
Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4V, 10V | |
Entworf fir Source Voltage (Vdss) | 60 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 2A (Ta) | |
Basis Produktnummer | RHP020 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Rohm Semiconductor RHP020N06T100.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | RHP020N06T100 | STP160N3LL | SIHFZ48RS-GE3 | FCP11N60N |
Hiersteller | Rohm Semiconductor | STMicroelectronics | Vishay Siliconix | onsemi |
Vgs (th) (Max) @ Id | 2.5V @ 1mA | 2.5V @ 250µA | 4V @ 250µA | 4V @ 250µA |
Mounting Type | Surface Mount | Through Hole | Surface Mount | Through Hole |
Package protegéieren | Tape & Reel (TR) | Tube | Tape & Reel (TR) | Tube |
Supplier Device Package | MPT3 | TO-220 | D²PAK (TO-263) | TO-220-3 |
Basis Produktnummer | RHP020 | STP160 | SIHFZ48 | FCP11 |
Fuert Volt (Max Rds On, Min Rds On) | 4V, 10V | 4.5V, 10V | 10V | 10V |
FET Feature | - | - | - | - |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Vgs (Max) | ±20V | ±20V | ±20V | ±30V |
Operatioun Temperatur | 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) |
Power Dissipation (Max) | 500mW (Ta) | 136W (Tc) | 190W (Tc) | 94W (Tc) |
Package / Case | TO-243AA | TO-220-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-220-3 |
Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V | 42 nC @ 4.5 V | 110 nC @ 10 V | 35.6 nC @ 10 V |
Rds On (Max) @ Id, Vgs | 200mOhm @ 2A, 10V | 3.2mOhm @ 60A, 10V | 18mOhm @ 43A, 10V | 299mOhm @ 5.4A, 10V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 2A (Ta) | 120A (Tc) | 50A (Tc) | 10.8A (Tc) |
Input Capacitance (Ciss) (Max) @ Vds | 140 pF @ 10 V | 3500 pF @ 25 V | 2400 pF @ 25 V | 1505 pF @ 100 V |
Serie | - | STripFET™ H6 | - | SupreMOS™ |
Entworf fir Source Voltage (Vdss) | 60 V | 30 V | 60 V | 600 V |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Eroflueden RHP020N06T100 PDF DataDhusts an Rohm Semiconductor Dokumentatioun fir RHP020N06T100 - Rohm Semiconductor.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
---|---|
Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
Wëllt Dir e bessere Präis? A WED AN AMFE NEW, MELLT DIR DIR NËMMEN.