RF4C050APTR Tech Spezifikatioune
Rohm Semiconductor - RF4C050APTR technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Rohm Semiconductor - RF4C050APTR
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | LAPIS Technology | |
Vgs (th) (Max) @ Id | 1V @ 1mA | |
Vgs (Max) | -8V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | HUML2020L8 | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 26mOhm @ 5A, 4.5V | |
Power Dissipation (Max) | 2W (Ta) | |
Package / Case | 8-PowerUDFN | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 5500 pF @ 10 V | |
Gate Charge (Qg) (Max) @ Vgs | 55 nC @ 4.5 V | |
FET Typ | P-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 1.8V, 4.5V | |
Entworf fir Source Voltage (Vdss) | 20 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 10A (Ta) | |
Basis Produktnummer | RF4C050 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Rohm Semiconductor RF4C050APTR.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | RF4C050APTR | RF4E075ATTCR | RF4C100BCTCR | RF4E080BNTR |
Hiersteller | Rohm Semiconductor | Rohm Semiconductor | Rohm Semiconductor | Rohm Semiconductor |
Power Dissipation (Max) | 2W (Ta) | 2W (Ta) | 2W (Ta) | 2W (Ta) |
Vgs (Max) | -8V | ±20V | ±8V | ±20V |
Package / Case | 8-PowerUDFN | 8-PowerUDFN | 8-PowerUDFN | 8-PowerUDFN |
Serie | - | - | - | - |
Supplier Device Package | HUML2020L8 | HUML2020L8 | HUML2020L8 | HUML2020L8 |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
FET Typ | P-Channel | P-Channel | P-Channel | N-Channel |
Basis Produktnummer | RF4C050 | RF4E075 | RF4C100 | RF4E080 |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 10A (Ta) | 7.5A (Ta) | 10A (Ta) | 8A (Ta) |
Operatioun Temperatur | 150°C (TJ) | 150°C (TJ) | 150°C (TJ) | 150°C (TJ) |
Gate Charge (Qg) (Max) @ Vgs | 55 nC @ 4.5 V | 22 nC @ 10 V | 23.5 nC @ 4.5 V | 14.5 nC @ 10 V |
Vgs (th) (Max) @ Id | 1V @ 1mA | 2.5V @ 1mA | 1.2V @ 1mA | 2V @ 250µA |
Input Capacitance (Ciss) (Max) @ Vds | 5500 pF @ 10 V | 1000 pF @ 15 V | 1660 pF @ 10 V | 660 pF @ 15 V |
Entworf fir Source Voltage (Vdss) | 20 V | 30 V | 20 V | 30 V |
Rds On (Max) @ Id, Vgs | 26mOhm @ 5A, 4.5V | 21.7mOhm @ 7.5A, 10V | 15.6mOhm @ 10A, 4.5V | 17.6mOhm @ 8A, 10V |
Fuert Volt (Max Rds On, Min Rds On) | 1.8V, 4.5V | 4.5V, 10V | 1.8V, 4.5V | 4.5V, 10V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
FET Feature | - | - | - | - |
Eroflueden RF4C050APTR PDF DataDhusts an Rohm Semiconductor Dokumentatioun fir RF4C050APTR - Rohm Semiconductor.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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