RF05VAM1STR Tech Spezifikatioune
Rohm Semiconductor - RF05VAM1STR technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Rohm Semiconductor - RF05VAM1STR
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | LAPIS Technology | |
| Voltage - Viru (Vf) (Max) @ Wann | 980 mV @ 500 mA | |
| Voltage - DC Reverse (Vr) (Max) | 100 V | |
| Technologie | Standard | |
| Supplier Device Package | TUMD2S | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Serie | - | |
| Reverse Recovery Time (trr) | 25 ns |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package / Case | 2-SMD, Flat Lead | |
| Package protegéieren | Tape & Reel (TR) | |
| Operatiounstemperatur - Junction | 150°C (Max) | |
| Mounting Type | Surface Mount | |
| Aktuell - Reverse Leakage @ Vr | 10 µA @ 100 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 500mA | |
| Capacitance @ Vr, F. | - | |
| Basis Produktnummer | RF05VAM1 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Rohm Semiconductor RF05VAM1STR.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | RF05VAM1STR | RF05VA2STR | RF051VA2STR | RF05VAM2STR |
| Hiersteller | Rohm Semiconductor | Rohm Semiconductor | Rohm Semiconductor | Rohm Semiconductor |
| Operatiounstemperatur - Junction | 150°C (Max) | 150°C (Max) | 150°C (Max) | 150°C (Max) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Technologie | Standard | Standard | Standard | Standard |
| Voltage - Viru (Vf) (Max) @ Wann | 980 mV @ 500 mA | 980 mV @ 500 mA | 980 mV @ 500 mA | 980 mV @ 500 mA |
| Voltage - DC Reverse (Vr) (Max) | 100 V | 200 V | 200 V | 200 V |
| Package / Case | 2-SMD, Flat Lead | 2-SMD, Flat Lead | 2-SMD, Flat Lead | 2-SMD, Flat Lead |
| Supplier Device Package | TUMD2S | TUMD2 | TUMD2 | TUMD2S |
| Basis Produktnummer | RF05VAM1 | RF05VA2 | RF051 | RF05VAM2 |
| Serie | - | - | - | - |
| Reverse Recovery Time (trr) | 25 ns | 25 ns | 25 ns | 25 ns |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 500mA | 500mA | 500mA | 500mA |
| Capacitance @ Vr, F. | - | - | - | - |
| Aktuell - Reverse Leakage @ Vr | 10 µA @ 100 V | 10 µA @ 200 V | 10 µA @ 200 V | 10 µA @ 200 V |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) |
Eroflueden RF05VAM1STR PDF DataDhusts an Rohm Semiconductor Dokumentatioun fir RF05VAM1STR - Rohm Semiconductor.
RF0603-137RRALECRF05VA2STRRohm SemiconductorDIODE GEN PURP 200V 500MA TUMD2RF0603-16K9RALECRF0603-15.8KROYALOHM
RF05VA1SFHTRLAPIS TechnologyRF05VA2SLAPIS TechnologyRF051VA2STRRohm SemiconductorDIODE GEN PURP 200V 500MA TUMD2RF051VA2SLAPIS TechnologyRF0603-10K 1SUPRF0603-0R 1SUPRF05VA2S/TRLAPIS TechnologyRF0603-15.4KROYALOHMRF0603-15K 1RALECRF05VAM2STRRohm SemiconductorDIODE GEN PURP 200V 500MA TUMD2SRF05VA1STRRohm SemiconductorDIODE GEN PURP 100V 500MA TUMD2
RF0554-000Tyco ElectronicsRF05VAM2SLAPIS TechnologyRF05A2SLAPIS Technology| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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