R6020JNXC7G Tech Spezifikatioune
Rohm Semiconductor - R6020JNXC7G technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Rohm Semiconductor - R6020JNXC7G
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | LAPIS Technology | |
Vgs (th) (Max) @ Id | 7V @ 3.5mA | |
Vgs (Max) | ±30V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-220FM | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 234mOhm @ 10A, 15V | |
Power Dissipation (Max) | 76W (Tc) | |
Package / Case | TO-220-3 Full Pack | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 100 V | |
Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 15 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 15V | |
Entworf fir Source Voltage (Vdss) | 600 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 20A (Tc) | |
Basis Produktnummer | R6020 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Rohm Semiconductor R6020JNXC7G.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | R6020JNXC7G | R6020ENX | R6020ANX | R6020ANZC8 |
Hiersteller | Rohm Semiconductor | Rohm Semiconductor | Rohm Semiconductor | Rohm Semiconductor |
Serie | - | - | - | - |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | 150°C (TJ) | 150°C (TJ) | 150°C (TJ) |
Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 100 V | 1400 pF @ 25 V | 2040 pF @ 25 V | 2040 pF @ 25 V |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Supplier Device Package | TO-220FM | TO-220FM | TO-220FM | TO-3PF |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Package protegéieren | Tube | Bulk | Bulk | Tube |
FET Feature | - | - | - | - |
Fuert Volt (Max Rds On, Min Rds On) | 15V | 10V | 10V | 10V |
Basis Produktnummer | R6020 | R6020 | R6020 | - |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 20A (Tc) | 20A (Tc) | 20A (Ta) | 20A (Ta) |
Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 15 V | 60 nC @ 10 V | 65 nC @ 10 V | 65 nC @ 10 V |
Vgs (th) (Max) @ Id | 7V @ 3.5mA | 4V @ 1mA | 4.5V @ 1mA | 4.15V @ 1mA |
Power Dissipation (Max) | 76W (Tc) | 50W (Tc) | 50W (Tc) | 120W (Tc) |
Rds On (Max) @ Id, Vgs | 234mOhm @ 10A, 15V | 196mOhm @ 10A, 10V | 220mOhm @ 10A, 10V | 220mOhm @ 10A, 10V |
Vgs (Max) | ±30V | ±20V | ±30V | ±30V |
Package / Case | TO-220-3 Full Pack | TO-220-3 Full Pack | TO-220-3 Full Pack | TO-3P-3 Full Pack |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Entworf fir Source Voltage (Vdss) | 600 V | 600 V | 600 V | 600 V |
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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