R6015ENX Tech Spezifikatioune
Rohm Semiconductor - R6015ENX technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Rohm Semiconductor - R6015ENX
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | LAPIS Technology | |
Vgs (th) (Max) @ Id | 4V @ 1mA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-220FM | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 290mOhm @ 6.5A, 10V | |
Power Dissipation (Max) | 40W (Tc) | |
Package / Case | TO-220-3 Full Pack | |
Package protegéieren | Bulk |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 910 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 600 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 15A (Tc) | |
Basis Produktnummer | R6015 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Rohm Semiconductor R6015ENX.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | R6015ENX | R6012JNXC7G | R6018JNXC7G | R6015FNX |
Hiersteller | Rohm Semiconductor | Rohm Semiconductor | Rohm Semiconductor | Rohm Semiconductor |
Operatioun Temperatur | 150°C (TJ) | 150°C (TJ) | -55°C ~ 150°C (TJ) | 150°C (TJ) |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 15V | 15V | 10V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 15A (Tc) | 12A (Tc) | 18A (Tc) | 15A (Ta) |
Serie | - | - | - | - |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Entworf fir Source Voltage (Vdss) | 600 V | 600 V | 600 V | 600 V |
Package protegéieren | Bulk | Tube | Tube | Bulk |
Rds On (Max) @ Id, Vgs | 290mOhm @ 6.5A, 10V | 390mOhm @ 6A, 15V | 286mOhm @ 9A, 15V | 350mOhm @ 7.5A, 10V |
Package / Case | TO-220-3 Full Pack | TO-220-3 Full Pack | TO-220-3 Full Pack | TO-220-3 Full Pack |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V | 28 nC @ 15 V | 42 nC @ 15 V | 42 nC @ 10 V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Vgs (th) (Max) @ Id | 4V @ 1mA | 7V @ 2.5mA | 7V @ 4.2mA | 5V @ 1mA |
Vgs (Max) | ±20V | ±30V | ±30V | ±30V |
FET Feature | - | - | - | - |
Input Capacitance (Ciss) (Max) @ Vds | 910 pF @ 25 V | 900 pF @ 100 V | 1300 pF @ 100 V | 1660 pF @ 25 V |
Supplier Device Package | TO-220FM | TO-220FM | TO-220FM | TO-220FM |
Power Dissipation (Max) | 40W (Tc) | 60W (Tc) | 72W (Tc) | 50W (Tc) |
Basis Produktnummer | R6015 | R6012 | R6018 | R6015 |
Eroflueden R6015ENX PDF DataDhusts an Rohm Semiconductor Dokumentatioun fir R6015ENX - Rohm Semiconductor.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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