R6009KNX Tech Spezifikatioune
Rohm Semiconductor - R6009KNX technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Rohm Semiconductor - R6009KNX
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | LAPIS Technology | |
Vgs (th) (Max) @ Id | 5V @ 1mA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-220FM | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 535mOhm @ 2.8A, 10V | |
Power Dissipation (Max) | 48W (Tc) | |
Package / Case | TO-220-3 Full Pack | |
Package protegéieren | Bulk |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 540 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 16.5 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 600 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 9A (Tc) | |
Basis Produktnummer | R6009 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Rohm Semiconductor R6009KNX.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | R6009KNX | R6008ANX | R6009JNJGTL | R6008FNJTL |
Hiersteller | Rohm Semiconductor | Rohm Semiconductor | Rohm Semiconductor | Rohm Semiconductor |
Power Dissipation (Max) | 48W (Tc) | 50W (Tc) | 125W (Tc) | 50W (Tc) |
Package protegéieren | Bulk | Bulk | Tape & Reel (TR) | Tape & Reel (TR) |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 15V | 10V |
Basis Produktnummer | R6009 | R6008 | R6009 | R6008 |
Gate Charge (Qg) (Max) @ Vgs | 16.5 nC @ 10 V | 21 nC @ 10 V | 22 nC @ 15 V | 20 nC @ 10 V |
Serie | - | - | - | - |
Vgs (Max) | ±20V | ±30V | ±30V | ±30V |
Rds On (Max) @ Id, Vgs | 535mOhm @ 2.8A, 10V | 800mOhm @ 4A, 10V | 585mOhm @ 4.5A, 15V | 950mOhm @ 4A, 10V |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | 150°C (TJ) | -55°C ~ 150°C (TJ) | 150°C (TJ) |
Mounting Type | Through Hole | Through Hole | Surface Mount | Surface Mount |
Input Capacitance (Ciss) (Max) @ Vds | 540 pF @ 25 V | 680 pF @ 25 V | 645 pF @ 100 V | 580 pF @ 25 V |
Entworf fir Source Voltage (Vdss) | 600 V | 600 V | 600 V | 600 V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 9A (Tc) | 8A (Tc) | 9A (Tc) | 8A (Tc) |
Package / Case | TO-220-3 Full Pack | TO-220-3 Full Pack | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Vgs (th) (Max) @ Id | 5V @ 1mA | 4.5V @ 1mA | 7V @ 1.38mA | 4V @ 1mA |
Supplier Device Package | TO-220FM | TO-220FM | LPTS | LPTS |
FET Feature | - | - | - | - |
Eroflueden R6009KNX PDF DataDhusts an Rohm Semiconductor Dokumentatioun fir R6009KNX - Rohm Semiconductor.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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