R6006ANDTL Tech Spezifikatioune
Rohm Semiconductor - R6006ANDTL technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Rohm Semiconductor - R6006ANDTL
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | LAPIS Technology | |
| Vgs (th) (Max) @ Id | 4.5V @ 1mA | |
| Vgs (Max) | ±30V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | CPT3 | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 3A, 10V | |
| Power Dissipation (Max) | 40W (Tc) | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 460 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 600 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 6A (Tc) | |
| Basis Produktnummer | R6006 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Rohm Semiconductor R6006ANDTL.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | R6006ANDTL | R6007JNJGTL | R6004JNJGTL | R6006JND3TL1 |
| Hiersteller | Rohm Semiconductor | Rohm Semiconductor | Rohm Semiconductor | Rohm Semiconductor |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V | 17.5 nC @ 15 V | 10.5 nC @ 15 V | 15.5 nC @ 15 V |
| FET Feature | - | - | - | - |
| Vgs (th) (Max) @ Id | 4.5V @ 1mA | 7V @ 1mA | 7V @ 450µA | 7V @ 800µA |
| Operatioun Temperatur | 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | 150°C (TJ) |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | 15V | 15V | 15V |
| Input Capacitance (Ciss) (Max) @ Vds | 460 pF @ 25 V | 475 pF @ 100 V | 260 pF @ 100 V | 410 pF @ 100 V |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Entworf fir Source Voltage (Vdss) | 600 V | 600 V | 600 V | 600 V |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 3A, 10V | 780mOhm @ 3.5A, 15V | 1.43Ohm @ 2A, 15V | 936mOhm @ 3A, 15V |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Vgs (Max) | ±30V | ±30V | ±30V | ±30V |
| Power Dissipation (Max) | 40W (Tc) | 96W (Tc) | 60W (Tc) | 86W (Tc) |
| Serie | - | - | - | - |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package | CPT3 | LPTS | LPTS | TO-252 |
| Basis Produktnummer | R6006 | R6007 | R6004 | R6006 |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 6A (Tc) | 7A (Tc) | 4A (Tc) | 6A (Tc) |
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R6004ENXRohm SemiconductorMOSFET N-CH 600V 4A TO220FMR6004PND HZGTLLAPIS TechnologyR6007KND3TLLAPIS TechnologyR6007JND3TL1Rohm SemiconductorMOSFET N-CH 600V 7A TO252R6006KND3TL1Rohm SemiconductorMOSFET N-CH 600V 6A TO252R6006JNJGTLRohm SemiconductorMOSFET N-CH 600V 6A LPTSR6007ENXRohm SemiconductorMOSFET N-CH 600V 7A TO220FMR6007KND3TL1LAPIS TechnologyR6006ADN TLLAPIS TechnologyR6006ANXRohm SemiconductorMOSFET N-CH 600V 6A TO220FMR6004PNDFRATLLAPIS Technology| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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