QS6M4TR Tech Spezifikatioune
Rohm Semiconductor - QS6M4TR technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Rohm Semiconductor - QS6M4TR
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | LAPIS Technology | |
| Vgs (th) (Max) @ Id | 1.5V @ 1mA | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TSMT6 (SC-95) | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 230mOhm @ 1.5A, 4.5V | |
| Power - Max | 1.25W | |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 80pF @ 10V | |
| Gate Charge (Qg) (Max) @ Vgs | 1.6nC @ 4.5V | |
| FET Feature | Logic Level Gate | |
| Entworf fir Source Voltage (Vdss) | 30V, 20V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 1.5A | |
| Konfiguratioun | N and P-Channel | |
| Basis Produktnummer | QS6M4 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Rohm Semiconductor QS6M4TR.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | QS6M4TR | QS6K1TR | QS6K21TR | QS6K1FRATR |
| Hiersteller | Rohm Semiconductor | Rohm Semiconductor | Rohm Semiconductor | Rohm Semiconductor |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 1.5A | 1A | 1A | 1A (Ta) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 | SOT-23-6 Thin, TSOT-23-6 | SOT-23-6 Thin, TSOT-23-6 | SOT-23-6 Thin, TSOT-23-6 |
| Basis Produktnummer | QS6M4 | QS6K1 | QS6K21 | QS6K1 |
| Entworf fir Source Voltage (Vdss) | 30V, 20V | 30V | 45V | 30V |
| Serie | - | - | - | Automotive, AEC-Q101 |
| Input Capacitance (Ciss) (Max) @ Vds | 80pF @ 10V | 77pF @ 10V | - | 77pF @ 10V |
| Rds On (Max) @ Id, Vgs | 230mOhm @ 1.5A, 4.5V | 238mOhm @ 1A, 4.5V | - | 238mOhm @ 1A, 4.5V |
| Power - Max | 1.25W | 1.25W | 1.25W | 900mW (Tc) |
| Supplier Device Package | TSMT6 (SC-95) | TSMT6 (SC-95) | TSMT6 (SC-95) | TSMT6 (SC-95) |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Konfiguratioun | N and P-Channel | 2 N-Channel (Dual) | 2 N-Channel (Dual) | 2 N-Channel (Dual) |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Vgs (th) (Max) @ Id | 1.5V @ 1mA | 1.5V @ 1mA | 1.5V @ 1mA | 1.5V @ 1mA |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| FET Feature | Logic Level Gate | Logic Level Gate | - | Logic Level Gate, 2.5V Drive |
| Gate Charge (Qg) (Max) @ Vgs | 1.6nC @ 4.5V | 2.4nC @ 4.5V | - | 2.4nC @ 4.5V |
| Operatioun Temperatur | 150°C (TJ) | 150°C (TJ) | -55°C ~ 150°C (TJ) | 150°C |
Eroflueden QS6M4TR PDF DataDhusts an Rohm Semiconductor Dokumentatioun fir QS6M4TR - Rohm Semiconductor.
QS6K21FRALAPIS TechnologyQS6K1TRRohm SemiconductorMOSFET 2N-CH 30V 1A TSMT6QS6K21TRRohm SemiconductorMOSFET 2N-CH 45V 1A TSMT6QS6K21LAPIS TechnologyQS6U22/TRLAPIS TechnologyQS6M3G2TRLAPIS TechnologyQS6U40/TRLAPIS TechnologyQS6K1FRATRRohm Semiconductor2.5V DRIVE NCH+NCH MOSFET (CORREQS6M3/TRLAPIS TechnologyQS6U24LAPIS TechnologyQS6U24/TRLAPIS TechnologyQS6K1FRALAPIS TechnologyQS6M4TR MOSLAPIS TechnologyQS6U24TRRohm SemiconductorMOSFET P-CH 30V 1A TSMT6QS6M3TR MOSLAPIS TechnologyQS6K21/TRLAPIS TechnologyQS6M3TRRohm SemiconductorMOSFET N/P-CH 30V/20V 1.5A TSMT6QS6K1TR MOSLAPIS Technology| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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