2SB1260T100Q Tech Spezifikatioune
Rohm Semiconductor - 2SB1260T100Q technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Rohm Semiconductor - 2SB1260T100Q
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | LAPIS Technology | |
| Voltage - Collector Emitter Breakdown (Max) | 80 V | |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 50mA, 500mA | |
| Transistor Type | PNP | |
| Supplier Device Package | MPT3 | |
| Serie | - | |
| Power - Max | 2 W | |
| Package / Case | TO-243AA |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package protegéieren | Tape & Reel (TR) | |
| Operatioun Temperatur | 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Frequenz - Iwwergang | 100MHz | |
| DC Aktuelle Verstärker (hFE) (Min) @ Ic, Vce | 120 @ 100mA, 3V | |
| Aktuell - Kollektorat Cutoff (Max) | 1µA (ICBO) | |
| Aktuell - Sammler (Ic) (Max) | 1 A | |
| Basis Produktnummer | 2SB1260 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Rohm Semiconductor 2SB1260T100Q.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | 2SB1260T100Q | 2SB1260T100R | 2SB1260T100P | 2SB1261(5)-Z-E1-AY |
| Hiersteller | Rohm Semiconductor | Rohm Semiconductor | Rohm Semiconductor | Renesas Electronics Corporation |
| Serie | - | - | - | - |
| Operatioun Temperatur | 150°C (TJ) | 150°C (TJ) | 150°C (TJ) | - |
| Power - Max | 2 W | 2 W | 2 W | - |
| Package / Case | TO-243AA | TO-243AA | TO-243AA | - |
| Aktuell - Kollektorat Cutoff (Max) | 1µA (ICBO) | 1µA (ICBO) | 1µA (ICBO) | - |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | - |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | - |
| Basis Produktnummer | 2SB1260 | 2SB1260 | 2SB1260 | - |
| Voltage - Collector Emitter Breakdown (Max) | 80 V | 80 V | 80 V | - |
| Transistor Type | PNP | PNP | PNP | - |
| Aktuell - Sammler (Ic) (Max) | 1 A | 1 A | 1 A | - |
| Frequenz - Iwwergang | 100MHz | 100MHz | 100MHz | - |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 50mA, 500mA | 400mV @ 50mA, 500mA | 400mV @ 50mA, 500mA | - |
| DC Aktuelle Verstärker (hFE) (Min) @ Ic, Vce | 120 @ 100mA, 3V | 180 @ 100mA, 3V | 82 @ 100mA, 3V | - |
| Supplier Device Package | MPT3 | MPT3 | MPT3 | - |
Eroflueden 2SB1260T100Q PDF DataDhusts an Rohm Semiconductor Dokumentatioun fir 2SB1260T100Q - Rohm Semiconductor.
2SB1260T100RRohm SemiconductorTRANS PNP 80V 1A MPT32SB1261(5)-Z-E1-AYRenesas Electronics Corporation2SB1260T113PLAPIS Technology2SB1261 MOSNEC
2SB1261-AZFreescale / NXP Semiconductors2SB1261(0)-Z-E1-AZRenesas Electronics Corporation2SB1260-PLAPIS Technology2SB1261Renesas Electronics Corporation2SB1260FRAT101QLAPIS Technology2SB1260T100PRohm SemiconductorTRANS PNP 80V 1A MPT32SB1260FRALAPIS Technology2SB1260FRAT100QLAPIS Technology2SB1261-AZ-E2NEC/RENESAS2SB1260-T100-P/QLAPIS Technology2SB1260L-Q-AB3-RUTC2SB1260LUTC2SB1261(5)AZRenesas Electronics Corporation2SB1260G-Q-AB3-RUTC| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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