2SB1182TLR Tech Spezifikatioune
Rohm Semiconductor - 2SB1182TLR technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Rohm Semiconductor - 2SB1182TLR
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | LAPIS Technology | |
| Voltage - Collector Emitter Breakdown (Max) | 32 V | |
| Vce Saturation (Max) @ Ib, Ic | 800mV @ 200mA, 2A | |
| Transistor Type | PNP | |
| Supplier Device Package | CPT3 | |
| Serie | - | |
| Power - Max | 10 W | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package protegéieren | Tape & Reel (TR) | |
| Operatioun Temperatur | 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Frequenz - Iwwergang | 100MHz | |
| DC Aktuelle Verstärker (hFE) (Min) @ Ic, Vce | 180 @ 500mA, 3V | |
| Aktuell - Kollektorat Cutoff (Max) | 100nA (ICBO) | |
| Aktuell - Sammler (Ic) (Max) | 2 A | |
| Basis Produktnummer | 2SB1182 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Rohm Semiconductor 2SB1182TLR.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | 2SB1182TLR | 2SB1183TL | 2SB1182TLQ | 2SB1184 TL Q |
| Hiersteller | Rohm Semiconductor | Rohm Semiconductor | Rohm Semiconductor | LAPIS Technology |
| DC Aktuelle Verstärker (hFE) (Min) @ Ic, Vce | 180 @ 500mA, 3V | 1000 @ 500mA, 2V | 120 @ 500mA, 3V | - |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | - |
| Transistor Type | PNP | PNP - Darlington | PNP | - |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | - |
| Serie | - | - | - | - |
| Supplier Device Package | CPT3 | CPT3 | CPT3 | - |
| Basis Produktnummer | 2SB1182 | 2SB1183 | 2SB1182 | - |
| Vce Saturation (Max) @ Ib, Ic | 800mV @ 200mA, 2A | 1.5V @ 1.2mA, 600mA | 800mV @ 200mA, 2A | - |
| Voltage - Collector Emitter Breakdown (Max) | 32 V | 40 V | 32 V | - |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | - |
| Frequenz - Iwwergang | 100MHz | - | 100MHz | - |
| Power - Max | 10 W | 1 W | 10 W | - |
| Operatioun Temperatur | 150°C (TJ) | 150°C (TJ) | 150°C (TJ) | - |
| Aktuell - Sammler (Ic) (Max) | 2 A | 2 A | 2 A | - |
| Aktuell - Kollektorat Cutoff (Max) | 100nA (ICBO) | 1µA (ICBO) | 1µA (ICBO) | - |
Eroflueden 2SB1182TLR PDF DataDhusts an Rohm Semiconductor Dokumentatioun fir 2SB1182TLR - Rohm Semiconductor.
2SB1184 TL QLAPIS Technology2SB1184 TL RLAPIS Technology
2SB1182TLQ-NDAMI Semiconductor/onsemi2SB1184 MOSLAPIS Technology2SB1183TLRohm SemiconductorTRANS PNP DARL 40V 2A CPT32SB1182T201RLAPIS Technology2SB1183LAPIS Technology2SB1182TLQ/RLAPIS Technology2SB1184 TLPLAPIS Technology
2SB1184CJ2SB1182TLQRLAPIS Technology2SB1182R-T MOS2SB1184 TL PLAPIS Technology2SB1182TL RLAPIS Technology2SB1182TLQRohm SemiconductorTRANS PNP 32V 2A CPT32SB1182Q X168KEXIN2SB1183 TLLAPIS Technology2SB1182R-TLAPIS Technology| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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