VWM200-01P Tech Spezifikatioune
IXYS - VWM200-01P technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu IXYS - VWM200-01P
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | IXYS Corporation | |
| Vgs (th) (Max) @ Id | 4V @ 2mA | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | V2-PAK | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 5.2mOhm @ 100A, 10V | |
| Power - Max | - | |
| Package / Case | V2-PAK | |
| Package protegéieren | Box |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -40°C ~ 175°C (TJ) | |
| Mounting Type | Chassis Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | - | |
| Gate Charge (Qg) (Max) @ Vgs | 430nC @ 10V | |
| FET Feature | - | |
| Entworf fir Source Voltage (Vdss) | 100V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 210A | |
| Konfiguratioun | 6 N-Channel (3-Phase Bridge) | |
| Basis Produktnummer | VWM200 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu IXYS VWM200-01P.
| Produktiounsattriff |  |
 |
|
 |
|---|---|---|---|---|
| Part Number | VWM200-01P | FDMS3669S | FDPC8011S | AO6602L |
| Hiersteller | IXYS | onsemi | onsemi | Alpha & Omega Semiconductor Inc. |
| Vgs (th) (Max) @ Id | 4V @ 2mA | 2.7V @ 250µA | 2.2V @ 250µA, 2.2V @ 1mA | 3V @ 250µA |
| Basis Produktnummer | VWM200 | FDMS3669 | FDPC8 | AO660 |
| Mounting Type | Chassis Mount | Surface Mount | Surface Mount | Surface Mount |
| Package protegéieren | Box | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Input Capacitance (Ciss) (Max) @ Vds | - | 1605pF @ 15V | 1240pF @ 13V, 4335pF @ 13V | 240pF @ 15V |
| Package / Case | V2-PAK | 8-PowerTDFN | 8-PowerWDFN | SC-74, SOT-457 |
| Gate Charge (Qg) (Max) @ Vgs | 430nC @ 10V | 24nC @ 10V | 19nC @ 10V, 64nC @ 10V | 8.5nC @ 10V |
| Entworf fir Source Voltage (Vdss) | 100V | 30V | 25V | 30V |
| Supplier Device Package | V2-PAK | Power56 | Powerclip-33 | 6-TSOP |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 210A | 13A, 18A | 13A (Ta), 20A (Tc), 27A (Ta), 60A (Tc) | - |
| FET Feature | - | Logic Level Gate | - | Logic Level Gate |
| Operatioun Temperatur | -40°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Power - Max | - | 1W | 800mW (Ta), 900mW (Ta) | 1.15W |
| Rds On (Max) @ Id, Vgs | 5.2mOhm @ 100A, 10V | 10mOhm @ 13A, 10V | 6mOhm @ 13A, 10V, 1.8mOhm @ 27A, 10V | 75mOhm @ 3.1A, 10V |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Konfiguratioun | 6 N-Channel (3-Phase Bridge) | 2 N-Channel (Dual) Asymmetrical | 2 N-Channel (Dual) Asymmetrical | N and P-Channel Complementary |
| Serie | - | PowerTrench® | PowerTrench® | - |
Eroflueden VWM200-01P PDF DataDhusts an IXYS Dokumentatioun fir VWM200-01P - IXYS.
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IRF7509TRPBFInfineon TechnologiesMOSFET N/P-CH 30V 2.7A/2A MICRO8| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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