MII75-12A3 Tech Spezifikatioune
IXYS - MII75-12A3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu IXYS - MII75-12A3
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | IXYS Corporation | |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V | |
| Vce (on) (Max) @ Vge, Ic | 2.7V @ 15V, 50A | |
| Supplier Device Package | Y4-M5 | |
| Serie | - | |
| Power - Max | 370 W | |
| Package / Case | Y4-M5 | |
| Package protegéieren | Box | |
| Operatioun Temperatur | -40°C ~ 150°C (TJ) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| NTC Thermistor | No | |
| Mounting Type | Chassis Mount | |
| Input Capacitance (Cies) @ Vce | 3.3 nF @ 25 V | |
| Input | Standard | |
| IGBT Type | NPT | |
| Aktuell - Kollektorat Cutoff (Max) | 4 mA | |
| Aktuell - Sammler (Ic) (Max) | 90 A | |
| Konfiguratioun | Half Bridge | |
| Basis Produktnummer | MII75 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu IXYS MII75-12A3.
| Produktiounsattriff |  |
 |
|
 |
|---|---|---|---|---|
| Part Number | MII75-12A3 | MII300-12E4 | MII150-12A4 | A2P75S12M3 |
| Hiersteller | IXYS | IXYS | IXYS | STMicroelectronics |
| Basis Produktnummer | MII75 | MII | MII150 | A2P75 |
| IGBT Type | NPT | NPT | NPT | Trench Field Stop |
| Power - Max | 370 W | 1100 W | 760 W | 454.5 W |
| Package / Case | Y4-M5 | Y3-Li | Y3-DCB | Module |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V | 1200 V | 1200 V | 1200 V |
| Konfiguratioun | Half Bridge | Half Bridge | Half Bridge | Three Phase Inverter |
| Aktuell - Kollektorat Cutoff (Max) | 4 mA | 3.3 mA | 7.5 mA | 100 µA |
| Supplier Device Package | Y4-M5 | Y3-Li | Y3-DCB | ACEPACK™ 2 |
| Mounting Type | Chassis Mount | Chassis Mount | Chassis Mount | Chassis Mount |
| Vce (on) (Max) @ Vge, Ic | 2.7V @ 15V, 50A | 2.8V @ 15V, 200A | 2.7V @ 15V, 100A | 2.3V @ 15V, 75A |
| Input | Standard | Standard | Standard | Standard |
| Operatioun Temperatur | -40°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) | 150°C (TJ) | -40°C ~ 150°C (TJ) |
| Input Capacitance (Cies) @ Vce | 3.3 nF @ 25 V | 11 nF @ 25 V | 6.6 nF @ 25 V | 4.7 nF @ 25 V |
| Aktuell - Sammler (Ic) (Max) | 90 A | 280 A | 180 A | 75 A |
| Package protegéieren | Box | Box | Box | Tray |
| Serie | - | - | - | - |
| NTC Thermistor | No | No | No | Yes |
Eroflueden MII75-12A3 PDF DataDhusts an IXYS Dokumentatioun fir MII75-12A3 - IXYS.
MII400-12A4IXYS / LittelfuseIGBT ModuleMII300-12E4IXYSIGBT MOD 1200V 280A 1100W Y3LIMII145-123AIXYS / LittelfuseIGBT ModuleMII150-12A4IXYSIGBT MOD 1200V 180A 760W Y3DCBA2P75S12M3STMicroelectronicsIGBT MOD 1200V 75A ACEPACK2
BSM200GA120DN2FSInfineon TechnologiesIGBT MODULE
CM300DY-12NFPowerex Inc.IGBT MOD 600V 300A 780WMWI35-12A7IXYSIGBT MODULE 1200V 62A 280W E2
APT50GT120JU3Microchip TechnologyIGBT MOD 1200V 75A 347W SOT227MII200-12A4IXYSIGBT MOD 1200V 270A 1130W Y3DCBF4-50R12MS4Infineon TechnologiesIGBT, 70A, 1200V, N-CHANNELMIIK431MII300-12A4IXYSIGBT MOD 1200V 330A 1380W Y3DCBMII400-12E4IXYSIGBT MOD 1200V 420A 1700W Y3LIMII100-12A3IXYSIGBT MODULE 1200V 135A 560W Y4M5APT30GF60JU2Microchip TechnologyIGBT MODULE 600V 58A 192W SOT227APT200GT60JRMicrochip TechnologyIGBT MOD 600V 195A 500W SOT227MII145-12A3IXYSIGBT MODULE 1200V 160A 700W Y4M5| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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