IXTU01N100 Tech Spezifikatioune
IXYS - IXTU01N100 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu IXYS - IXTU01N100
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | IXYS Corporation | |
Vgs (th) (Max) @ Id | 4.5V @ 25µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-251AA | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 80Ohm @ 100mA, 10V | |
Power Dissipation (Max) | 25W (Tc) | |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 54 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 6.9 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 1000 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 100mA (Tc) | |
Basis Produktnummer | IXTU01 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu IXYS IXTU01N100.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | IXTU01N100 | IXTT68P20T | IXTT110N10L2 | IXTU12N06T |
Hiersteller | IXYS | IXYS | IXYS | IXYS |
Serie | - | TrenchP™ | Linear L2™ | Trench |
Input Capacitance (Ciss) (Max) @ Vds | 54 pF @ 25 V | 33400 pF @ 25 V | 10500 pF @ 25 V | 256 pF @ 25 V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 100mA (Tc) | 68A (Tc) | 110A (Tc) | 12A (Tc) |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Basis Produktnummer | IXTU01 | IXTT68 | IXTT110 | IXTU12 |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Mounting Type | Through Hole | Surface Mount | Surface Mount | Through Hole |
Supplier Device Package | TO-251AA | TO-268AA | TO-268AA | TO-251AA |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) |
Vgs (th) (Max) @ Id | 4.5V @ 25µA | 4V @ 250µA | 4.5V @ 250µA | 4V @ 25µA |
Entworf fir Source Voltage (Vdss) | 1000 V | 200 V | 100 V | 60 V |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | TO-251-3 Short Leads, IPak, TO-251AA |
Vgs (Max) | ±20V | ±15V | ±20V | ±20V |
Gate Charge (Qg) (Max) @ Vgs | 6.9 nC @ 10 V | 380 nC @ 10 V | 260 nC @ 10 V | 3.4 nC @ 10 V |
Power Dissipation (Max) | 25W (Tc) | 568W (Tc) | 600W (Tc) | 33W (Tc) |
Rds On (Max) @ Id, Vgs | 80Ohm @ 100mA, 10V | 55mOhm @ 34A, 10V | 18mOhm @ 55A, 10V | 85mOhm @ 6A, 10V |
FET Typ | N-Channel | P-Channel | N-Channel | N-Channel |
Package protegéieren | Tube | Tube | Tube | Tube |
FET Feature | - | - | - | - |
Eroflueden IXTU01N100 PDF DataDhusts an IXYS Dokumentatioun fir IXTU01N100 - IXYS.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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