IXTQ96N15P Tech Spezifikatioune
IXYS - IXTQ96N15P technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu IXYS - IXTQ96N15P
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | IXYS Corporation | |
Vgs (th) (Max) @ Id | 5V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-3P | |
Serie | Polar | |
Rds On (Max) @ Id, Vgs | 24mOhm @ 500mA, 10V | |
Power Dissipation (Max) | 480W (Tc) | |
Package / Case | TO-3P-3, SC-65-3 | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 3500 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 150 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 96A (Tc) | |
Basis Produktnummer | IXTQ96 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu IXYS IXTQ96N15P.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | IXTQ96N15P | IXTQ80N28T | IXTT12N150HV | IXTQ96N25T |
Hiersteller | IXYS | IXYS | IXYS | IXYS |
Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V | 115 nC @ 10 V | 106 nC @ 10 V | 114 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds | 3500 pF @ 25 V | 5000 pF @ 25 V | 3720 pF @ 25 V | 6100 pF @ 25 V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 96A (Tc) | 80A (Tc) | 12A (Tc) | 96A (Tc) |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Basis Produktnummer | IXTQ96 | IXTQ80 | IXTT12 | IXTQ96 |
Package protegéieren | Tube | Tube | Tube | Tube |
Package / Case | TO-3P-3, SC-65-3 | TO-3P-3, SC-65-3 | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | TO-3P-3, SC-65-3 |
Serie | Polar | - | - | Trench |
Supplier Device Package | TO-3P | TO-3P | TO-268AA | TO-3P |
FET Feature | - | - | - | - |
Power Dissipation (Max) | 480W (Tc) | 500W (Tc) | 890W (Tc) | 625W (Tc) |
Vgs (Max) | ±20V | ±30V | ±30V | ±30V |
Mounting Type | Through Hole | Through Hole | Surface Mount | Through Hole |
Vgs (th) (Max) @ Id | 5V @ 250µA | 5V @ 1mA | 4.5V @ 250µA | 5V @ 1mA |
Rds On (Max) @ Id, Vgs | 24mOhm @ 500mA, 10V | 49mOhm @ 500mA, 10V | - | 29mOhm @ 500mA, 10V |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Entworf fir Source Voltage (Vdss) | 150 V | 280 V | 1500 V | 250 V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Eroflueden IXTQ96N15P PDF DataDhusts an IXYS Dokumentatioun fir IXTQ96N15P - IXYS.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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