IXTL2X180N10T Tech Spezifikatioune
IXYS - IXTL2X180N10T technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu IXYS - IXTL2X180N10T
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | IXYS Corporation | |
| Vgs (th) (Max) @ Id | 4.5V @ 250µA | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | ISOPLUSi5-Pak™ | |
| Serie | Trench | |
| Rds On (Max) @ Id, Vgs | 7.4mOhm @ 50A, 10V | |
| Power - Max | 150W | |
| Package / Case | ISOPLUSi5-Pak™ | |
| Package protegéieren | Tube |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Capacitance (Ciss) (Max) @ Vds | 6900pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 151nC @ 10V | |
| FET Feature | - | |
| Entworf fir Source Voltage (Vdss) | 100V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 100A | |
| Konfiguratioun | 2 N-Channel (Dual) | |
| Basis Produktnummer | IXTL2 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu IXYS IXTL2X180N10T.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | IXTL2X180N10T | IXTL2X200N085T | IXTN21N100 | IXTN200N10L2 |
| Hiersteller | IXYS | IXYS | IXYS | IXYS |
| Package / Case | ISOPLUSi5-Pak™ | ISOPLUSi5-Pak™ | SOT-227-4, miniBLOC | SOT-227-4, miniBLOC |
| Vgs (th) (Max) @ Id | 4.5V @ 250µA | 4V @ 250µA | 4.5V @ 500µA | 4.5V @ 3mA |
| Power - Max | 150W | 150W | - | - |
| Mounting Type | Through Hole | Through Hole | Chassis Mount | Chassis Mount |
| Package protegéieren | Tube | Tube | Tube | Bulk |
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| FET Feature | - | - | - | - |
| Gate Charge (Qg) (Max) @ Vgs | 151nC @ 10V | 152nC @ 10V | 250 nC @ 10 V | 540 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6900pF @ 25V | 7600pF @ 25V | 8400 pF @ 25 V | 23000 pF @ 25 V |
| Basis Produktnummer | IXTL2 | IXTL2X200 | IXTN21 | IXTN200 |
| Rds On (Max) @ Id, Vgs | 7.4mOhm @ 50A, 10V | 6mOhm @ 50A, 10V | 550mOhm @ 500mA, 10V | 11mOhm @ 100A, 10V |
| Konfiguratioun | 2 N-Channel (Dual) | 2 N-Channel (Dual) | - | - |
| Entworf fir Source Voltage (Vdss) | 100V | 85V | 1000 V | 100 V |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 100A | 112A | 21A (Tc) | 178A (Tc) |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Serie | Trench | TrenchMV™ | MegaMOS™ | Linear L2™ |
| Supplier Device Package | ISOPLUSi5-Pak™ | ISOPLUSi5-Pak™ | SOT-227B | SOT-227B |
Eroflueden IXTL2X180N10T PDF DataDhusts an IXYS Dokumentatioun fir IXTL2X180N10T - IXYS.
IXTN21N100IXYSMOSFET N-CH 1000V 21A SOT227BIXTN200N10L2IXYSMOSFET N-CH 100V 178A SOT227BIXTN210P10TIXYSMOSFET P-CH 100V 210A SOT227BIXTN170P10PIXYSMOSFET P-CH 100V 170A SOT227BIXTM21N50TO-3PIGBT ModuleIXTK90N15IXYSMOSFET N-CH 150V 90A TO264IXTK82N25PIXYSMOSFET N-CH 250V 82A TO264IXTL2N450IXYSMOSFET N-CH 4500V 2A I5PAKIXTN21N10IXYS / LittelfuseIGBT ModuleIXTK62N25IXYSMOSFET N-CH 250V 62A TO264IXTK90N25L2IXYSMOSFET N-CH 250V 90A TO264IXTL2X22DND75TIXYS / LittelfuseIXTN17N120LIXYSMOSFET N-CH 1200V 15A SOT-227BIXTK75N30IXYSMOSFET N-CH 300V 75A TO264IXTK82N25IXYS / LittelfuseIXTK80N25IXYSMOSFET N-CH 250V 80A TO264IXTL2X200N085TIXYSMOSFET 2N-CH 85V 112A I5-PAKIXTK80N25PIXYS / Littelfuse| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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