IXTK120N25 Tech Spezifikatioune
IXYS - IXTK120N25 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu IXYS - IXTK120N25
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | IXYS Corporation | |
Vgs (th) (Max) @ Id | 4V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-264 (IXTK) | |
Serie | MegaMOS™ | |
Rds On (Max) @ Id, Vgs | 20mOhm @ 500mA, 10V | |
Power Dissipation (Max) | 730W (Tc) | |
Package / Case | TO-264-3, TO-264AA | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 7700 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 360 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 250 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 120A (Tc) | |
Basis Produktnummer | IXTK120 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu IXYS IXTK120N25.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | IXTK120N25 | IXTK160N20 | IXTH96N20P | IXTK180N15 |
Hiersteller | IXYS | IXYS | IXYS | IXYS |
Entworf fir Source Voltage (Vdss) | 250 V | 200 V | 200 V | 150 V |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Package / Case | TO-264-3, TO-264AA | TO-264-3, TO-264AA | TO-247-3 | TO-264-3, TO-264AA |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Gate Charge (Qg) (Max) @ Vgs | 360 nC @ 10 V | 415 nC @ 10 V | 145 nC @ 10 V | 240 nC @ 10 V |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) |
Supplier Device Package | TO-264 (IXTK) | TO-264 (IXTK) | TO-247 (IXTH) | TO-264 (IXTK) |
FET Feature | - | - | - | - |
Vgs (th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 5V @ 250µA | 4V @ 250µA |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Basis Produktnummer | IXTK120 | IXTK160 | IXTH96 | IXTK180 |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Input Capacitance (Ciss) (Max) @ Vds | 7700 pF @ 25 V | 12900 pF @ 25 V | 4800 pF @ 25 V | 7000 pF @ 25 V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 120A (Tc) | 160A (Tc) | 96A (Tc) | 180A (Tc) |
Package protegéieren | Tube | Tube | Tube | Tube |
Serie | MegaMOS™ | MegaMOS™ | Polar | MegaMOS™ |
Rds On (Max) @ Id, Vgs | 20mOhm @ 500mA, 10V | 13mOhm @ 500mA, 10V | 24mOhm @ 500mA, 10V | 9mOhm @ 500mA, 10V |
Power Dissipation (Max) | 730W (Tc) | 730W (Tc) | 600W (Tc) | 730W (Tc) |
Eroflueden IXTK120N25 PDF DataDhusts an IXYS Dokumentatioun fir IXTK120N25 - IXYS.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
---|---|
Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
Wëllt Dir e bessere Präis? A WED AN AMFE NEW, MELLT DIR DIR NËMMEN.