IXTH30N50L Tech Spezifikatioune
IXYS - IXTH30N50L technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu IXYS - IXTH30N50L
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | IXYS Corporation | |
Vgs (th) (Max) @ Id | 4.5V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-247 (IXTH) | |
Serie | Linear | |
Rds On (Max) @ Id, Vgs | 200mOhm @ 15A, 10V | |
Power Dissipation (Max) | 400W (Tc) | |
Package / Case | TO-247-3 | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 10200 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 240 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 500 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 30A (Tc) | |
Basis Produktnummer | IXTH30 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu IXYS IXTH30N50L.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | IXTH30N50L | IXTH30N50 | IXTH30N50L2 | IXTH2N150L |
Hiersteller | IXYS | IXYS | IXYS | IXYS |
Input Capacitance (Ciss) (Max) @ Vds | 10200 pF @ 25 V | 5680 pF @ 25 V | 8100 pF @ 25 V | 1470 pF @ 25 V |
Vgs (th) (Max) @ Id | 4.5V @ 250µA | 4V @ 250µA | 4.5V @ 250µA | 8.5V @ 250µA |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
FET Feature | - | - | - | - |
Rds On (Max) @ Id, Vgs | 200mOhm @ 15A, 10V | 170mOhm @ 500mA, 10V | 200mOhm @ 15A, 10V | 15Ohm @ 1A, 20V |
Supplier Device Package | TO-247 (IXTH) | TO-247 (IXTH) | TO-247 (IXTH) | TO-247 (IXTH) |
Gate Charge (Qg) (Max) @ Vgs | 240 nC @ 10 V | 227 nC @ 10 V | 240 nC @ 10 V | 72 nC @ 20 V |
Package / Case | TO-247-3 | TO-247-3 | TO-247-3 | TO-247-3 |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Serie | Linear | MegaMOS™ | Linear L2™ | Linear |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 20V |
Entworf fir Source Voltage (Vdss) | 500 V | 500 V | 500 V | 1500 V |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Vgs (Max) | ±20V | ±20V | ±20V | ±30V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 30A (Tc) | 30A (Tc) | 30A (Tc) | 2A (Tc) |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Package protegéieren | Tube | Tube | Tube | Tube |
Basis Produktnummer | IXTH30 | IXTH30 | IXTH30 | IXTH2 |
Power Dissipation (Max) | 400W (Tc) | 360W (Tc) | 400W (Tc) | 290W (Tc) |
Eroflueden IXTH30N50L PDF DataDhusts an IXYS Dokumentatioun fir IXTH30N50L - IXYS.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
---|---|
Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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