IXTA80N10T Tech Spezifikatioune
IXYS - IXTA80N10T technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu IXYS - IXTA80N10T
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | IXYS Corporation | |
Vgs (th) (Max) @ Id | 5V @ 100µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-263AA | |
Serie | Trench | |
Rds On (Max) @ Id, Vgs | 14mOhm @ 25A, 10V | |
Power Dissipation (Max) | 230W (Tc) | |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 3040 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 100 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 80A (Tc) | |
Basis Produktnummer | IXTA80 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu IXYS IXTA80N10T.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | IXTA80N10T | IXTB62N50L | IXTC75N10 | IXTA86N20T |
Hiersteller | IXYS | IXYS | IXYS | IXYS |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 80A (Tc) | 62A (Tc) | 72A (Tc) | 86A (Tc) |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) |
FET Feature | - | - | - | - |
Serie | Trench | Linear | MegaMOS™ | Trench |
Vgs (Max) | ±20V | ±30V | ±20V | ±30V |
Package protegéieren | Tube | Tube | Tube | Tube |
Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V | 550 nC @ 20 V | 260 nC @ 10 V | 90 nC @ 10 V |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Input Capacitance (Ciss) (Max) @ Vds | 3040 pF @ 25 V | 11500 pF @ 25 V | 4500 pF @ 25 V | 4500 pF @ 25 V |
Supplier Device Package | TO-263AA | PLUS264™ | ISOPLUS220™ | TO-263AA |
Basis Produktnummer | IXTA80 | IXTB62 | IXTC75 | IXTA86 |
Vgs (th) (Max) @ Id | 5V @ 100µA | 5.5V @ 250µA | 4V @ 250µA | 5V @ 1mA |
Entworf fir Source Voltage (Vdss) | 100 V | 500 V | 100 V | 200 V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-264-3, TO-264AA | ISOPLUS220™ | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Power Dissipation (Max) | 230W (Tc) | 800W (Tc) | 230W (Tc) | 480W (Tc) |
Rds On (Max) @ Id, Vgs | 14mOhm @ 25A, 10V | 100mOhm @ 31A, 20V | 20mOhm @ 37.5A, 10V | 29mOhm @ 500mA, 10V |
Mounting Type | Surface Mount | Through Hole | Through Hole | Surface Mount |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 20V | 10V | 10V |
Eroflueden IXTA80N10T PDF DataDhusts an IXYS Dokumentatioun fir IXTA80N10T - IXYS.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
---|---|
Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
Wëllt Dir e bessere Präis? A WED AN AMFE NEW, MELLT DIR DIR NËMMEN.