IXTA1R6N50D2 Tech Spezifikatioune
IXYS - IXTA1R6N50D2 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu IXYS - IXTA1R6N50D2
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | IXYS Corporation | |
Vgs (th) (Max) @ Id | - | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-263AA | |
Serie | Depletion | |
Rds On (Max) @ Id, Vgs | 2.3Ohm @ 800mA, 0V | |
Power Dissipation (Max) | 100W (Tc) | |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 645 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 23.7 nC @ 5 V | |
FET Typ | N-Channel | |
FET Feature | Depletion Mode | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 500 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 1.6A (Tc) | |
Basis Produktnummer | IXTA1 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu IXYS IXTA1R6N50D2.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | IXTA1R6N50D2 | IXTA180N10T | IXTA26P20P | IXTA1N120P |
Hiersteller | IXYS | IXYS | IXYS | IXYS |
Serie | Depletion | Trench | Polar | Polar |
Rds On (Max) @ Id, Vgs | 2.3Ohm @ 800mA, 0V | 6.4mOhm @ 25A, 10V | 170mOhm @ 13A, 10V | 20Ohm @ 500mA, 10V |
Power Dissipation (Max) | 100W (Tc) | 480W (Tc) | 300W (Tc) | 63W (Tc) |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) |
Basis Produktnummer | IXTA1 | IXTA180 | IXTA26 | IXTA1 |
FET Typ | N-Channel | N-Channel | P-Channel | N-Channel |
Entworf fir Source Voltage (Vdss) | 500 V | 100 V | 200 V | 1200 V |
Supplier Device Package | TO-263AA | TO-263AA | TO-263AA | TO-263AA |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Gate Charge (Qg) (Max) @ Vgs | 23.7 nC @ 5 V | 151 nC @ 10 V | 56 nC @ 10 V | 17.6 nC @ 10 V |
Package protegéieren | Tube | Tube | Tube | Tube |
FET Feature | Depletion Mode | - | - | - |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 1.6A (Tc) | 180A (Tc) | 26A (Tc) | 1A (Tc) |
Vgs (Max) | ±20V | ±30V | ±20V | ±20V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Input Capacitance (Ciss) (Max) @ Vds | 645 pF @ 25 V | 6900 pF @ 25 V | 2740 pF @ 25 V | 550 pF @ 25 V |
Vgs (th) (Max) @ Id | - | 4.5V @ 250µA | 4V @ 250µA | 4.5V @ 50µA |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Eroflueden IXTA1R6N50D2 PDF DataDhusts an IXYS Dokumentatioun fir IXTA1R6N50D2 - IXYS.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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