IXTA170N075T2 Tech Spezifikatioune
IXYS - IXTA170N075T2 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu IXYS - IXTA170N075T2
Produktiounsattriff | Attributer Wäert | |
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Hiersteller | IXYS Corporation | |
Vgs (th) (Max) @ Id | 4V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-263AA | |
Serie | TrenchT2™ | |
Rds On (Max) @ Id, Vgs | 5.4mOhm @ 50A, 10V | |
Power Dissipation (Max) | 360W (Tc) | |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 6860 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 109 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 75 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 170A (Tc) | |
Basis Produktnummer | IXTA170 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu IXYS IXTA170N075T2.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | IXTA170N075T2 | IXTA18P10T | IXTA140P05T | IXTA150N15X4 |
Hiersteller | IXYS | IXYS | IXYS | IXYS |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) |
Basis Produktnummer | IXTA170 | IXTA18 | IXTA140 | IXTA150 |
Supplier Device Package | TO-263AA | TO-263AA | TO-263AA | TO-263AA |
Vgs (th) (Max) @ Id | 4V @ 250µA | 4.5V @ 250µA | 4V @ 250µA | 4.5V @ 250µA |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
FET Typ | N-Channel | P-Channel | P-Channel | N-Channel |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 170A (Tc) | 18A (Tc) | 140A (Tc) | 150A (Tc) |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Vgs (Max) | ±20V | ±15V | ±15V | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 6860 pF @ 25 V | 2100 pF @ 25 V | 13500 pF @ 25 V | 5500 pF @ 25 V |
FET Feature | - | - | - | - |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Gate Charge (Qg) (Max) @ Vgs | 109 nC @ 10 V | 39 nC @ 10 V | 200 nC @ 10 V | 105 nC @ 10 V |
Entworf fir Source Voltage (Vdss) | 75 V | 100 V | 50 V | 150 V |
Power Dissipation (Max) | 360W (Tc) | 83W (Tc) | 298W (Tc) | 480W (Tc) |
Serie | TrenchT2™ | TrenchP™ | TrenchP™ | Ultra X4 |
Package protegéieren | Tube | Tube | Tube | Tube |
Rds On (Max) @ Id, Vgs | 5.4mOhm @ 50A, 10V | 120mOhm @ 9A, 10V | 9mOhm @ 70A, 10V | 6.9mOhm @ 75A, 10V |
Eroflueden IXTA170N075T2 PDF DataDhusts an IXYS Dokumentatioun fir IXTA170N075T2 - IXYS.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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