IXFR66N50Q2 Tech Spezifikatioune
IXYS - IXFR66N50Q2 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu IXYS - IXFR66N50Q2
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | IXYS Corporation | |
Vgs (th) (Max) @ Id | 5.5V @ 8mA | |
Vgs (Max) | ±30V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | ISOPLUS247™ | |
Serie | HiPerFET™ | |
Rds On (Max) @ Id, Vgs | 85mOhm @ 33A, 10V | |
Power Dissipation (Max) | 500W (Tc) | |
Package / Case | TO-247-3 | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 9125 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 200 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 500 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 50A (Tc) | |
Basis Produktnummer | IXFR66 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu IXYS IXFR66N50Q2.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | IXFR66N50Q2 | IXFT140N10P | IXFR70N15 | IXFT32N50 |
Hiersteller | IXYS | IXYS | IXYS | IXYS |
Vgs (th) (Max) @ Id | 5.5V @ 8mA | 5V @ 4mA | 4V @ 4mA | 4V @ 4mA |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Mounting Type | Through Hole | Surface Mount | Through Hole | Surface Mount |
Package / Case | TO-247-3 | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | TO-247-3 | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
Package protegéieren | Tube | Box | Tube | Tube |
Supplier Device Package | ISOPLUS247™ | TO-268AA | ISOPLUS247™ | TO-268AA |
Power Dissipation (Max) | 500W (Tc) | 600W (Tc) | 250W (Tc) | 360W (Tc) |
Vgs (Max) | ±30V | ±20V | ±20V | ±20V |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Entworf fir Source Voltage (Vdss) | 500 V | 100 V | 150 V | 500 V |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Serie | HiPerFET™ | HiPerFET™, Polar | HiPerFET™ | HiPerFET™ |
FET Feature | - | - | - | - |
Gate Charge (Qg) (Max) @ Vgs | 200 nC @ 10 V | 155 nC @ 10 V | 180 nC @ 10 V | 300 nC @ 10 V |
Basis Produktnummer | IXFR66 | IXFT140 | IXFR70 | IXFT32 |
Input Capacitance (Ciss) (Max) @ Vds | 9125 pF @ 25 V | 4700 pF @ 25 V | 3600 pF @ 25 V | 5700 pF @ 25 V |
Rds On (Max) @ Id, Vgs | 85mOhm @ 33A, 10V | 11mOhm @ 70A, 10V | 28mOhm @ 35A, 10V | 150mOhm @ 15A, 10V |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 50A (Tc) | 140A (Tc) | 67A (Tc) | 32A (Tc) |
Eroflueden IXFR66N50Q2 PDF DataDhusts an IXYS Dokumentatioun fir IXFR66N50Q2 - IXYS.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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