IXFP22N60P3 Tech Spezifikatioune
IXYS - IXFP22N60P3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu IXYS - IXFP22N60P3
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | IXYS Corporation | |
Vgs (th) (Max) @ Id | 5V @ 1.5mA | |
Vgs (Max) | ±30V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-220-3 | |
Serie | HiPerFET™, Polar3™ | |
Rds On (Max) @ Id, Vgs | 360mOhm @ 11A, 10V | |
Power Dissipation (Max) | 500W (Tc) | |
Package / Case | TO-220-3 | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 2600 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 600 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 22A (Tc) | |
Basis Produktnummer | IXFP22 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu IXYS IXFP22N60P3.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | IXFP22N60P3 | IXFP34N65X2 | IXFP22N65X2M | IXFP20N50P3M |
Hiersteller | IXYS | IXYS | IXYS | IXYS |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Supplier Device Package | TO-220-3 | TO-220-3 | TO-220 Isolated Tab | TO-220-3 |
Vgs (th) (Max) @ Id | 5V @ 1.5mA | 5.5V @ 2.5mA | 5V @ 1.5mA | 5V @ 1.5mA |
Package protegéieren | Tube | Tube | Tube | Tube |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V | 56 nC @ 10 V | 37 nC @ 10 V | 36 nC @ 10 V |
Rds On (Max) @ Id, Vgs | 360mOhm @ 11A, 10V | 105mOhm @ 17A, 10V | 145mOhm @ 11A, 10V | 300mOhm @ 10A, 10V |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Input Capacitance (Ciss) (Max) @ Vds | 2600 pF @ 25 V | 3330 pF @ 25 V | 2190 pF @ 25 V | 1800 pF @ 25 V |
FET Feature | - | - | - | - |
Entworf fir Source Voltage (Vdss) | 600 V | 650 V | 650 V | 500 V |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 22A (Tc) | 34A (Tc) | 22A (Tc) | 8A (Tc) |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Power Dissipation (Max) | 500W (Tc) | 540W (Tc) | 37W (Tc) | 58W (Tc) |
Serie | HiPerFET™, Polar3™ | HiPerFET™, Ultra X2 | HiPerFET™, Ultra X2 | HiPerFET™, Polar3™ |
Vgs (Max) | ±30V | ±30V | ±30V | ±30V |
Package / Case | TO-220-3 | TO-220-3 | TO-220-3 Full Pack, Isolated Tab | TO-220-3 |
Basis Produktnummer | IXFP22 | IXFP34 | IXFP22 | IXFP20 |
Eroflueden IXFP22N60P3 PDF DataDhusts an IXYS Dokumentatioun fir IXFP22N60P3 - IXYS.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
---|---|
Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
Wëllt Dir e bessere Präis? A WED AN AMFE NEW, MELLT DIR DIR NËMMEN.