IXFP12N65X2M Tech Spezifikatioune
IXYS - IXFP12N65X2M technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu IXYS - IXFP12N65X2M
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | IXYS Corporation | |
Vgs (th) (Max) @ Id | 5V @ 250µA | |
Vgs (Max) | ±30V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-220 Isolated Tab | |
Serie | HiPerFET™, Ultra X2 | |
Rds On (Max) @ Id, Vgs | 310mOhm @ 6A, 10V | |
Power Dissipation (Max) | 40W (Tc) | |
Package / Case | TO-220-3 Full Pack, Isolated Tab | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 1134 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 18.5 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 650 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 12A (Tc) | |
Basis Produktnummer | IXFP12 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu IXYS IXFP12N65X2M.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | IXFP12N65X2M | IXFP14N60P | IXFP180N10T2 | IXFP10N60P |
Hiersteller | IXYS | IXYS | IXYS | IXYS |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Supplier Device Package | TO-220 Isolated Tab | TO-220-3 | TO-220-3 | TO-220-3 |
Input Capacitance (Ciss) (Max) @ Vds | 1134 pF @ 25 V | 2500 pF @ 25 V | 10500 pF @ 25 V | 1610 pF @ 25 V |
Gate Charge (Qg) (Max) @ Vgs | 18.5 nC @ 10 V | 36 nC @ 10 V | 185 nC @ 10 V | 32 nC @ 10 V |
Power Dissipation (Max) | 40W (Tc) | 300W (Tc) | 480W (Tc) | 200W (Tc) |
Rds On (Max) @ Id, Vgs | 310mOhm @ 6A, 10V | 550mOhm @ 7A, 10V | 6mOhm @ 50A, 10V | 740mOhm @ 5A, 10V |
Package protegéieren | Tube | Tube | Tube | Tube |
Vgs (Max) | ±30V | ±30V | ±20V | ±30V |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 12A (Tc) | 14A (Tc) | 180A (Tc) | 10A (Tc) |
FET Feature | - | - | - | - |
Serie | HiPerFET™, Ultra X2 | HiPerFET™, Polar | HiPerFET™, TrenchT2™ | HiPerFET™, Polar |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) |
Entworf fir Source Voltage (Vdss) | 650 V | 600 V | 100 V | 600 V |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Package / Case | TO-220-3 Full Pack, Isolated Tab | TO-220-3 | TO-220-3 | TO-220-3 |
Vgs (th) (Max) @ Id | 5V @ 250µA | 5.5V @ 2.5mA | 4V @ 250µA | 5.5V @ 1mA |
Basis Produktnummer | IXFP12 | IXFP14 | IXFP180 | IXFP10 |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Eroflueden IXFP12N65X2M PDF DataDhusts an IXYS Dokumentatioun fir IXFP12N65X2M - IXYS.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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