IXFN230N20T Tech Spezifikatioune
IXYS - IXFN230N20T technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu IXYS - IXFN230N20T
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | IXYS Corporation | |
Vgs (th) (Max) @ Id | 5V @ 8mA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | SOT-227B | |
Serie | HiPerFET™, Trench | |
Rds On (Max) @ Id, Vgs | 7.5mOhm @ 60A, 10V | |
Power Dissipation (Max) | 1090W (Tc) | |
Package / Case | SOT-227-4, miniBLOC | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Chassis Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 28000 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 378 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 200 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 220A (Tc) | |
Basis Produktnummer | IXFN230 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu IXYS IXFN230N20T.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | IXFN230N20T | IXFN260N17T | IXFN23N100 | IXFN24N100 |
Hiersteller | IXYS | IXYS | IXYS | IXYS |
Entworf fir Source Voltage (Vdss) | 200 V | 170 V | 1000 V | 1000 V |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Input Capacitance (Ciss) (Max) @ Vds | 28000 pF @ 25 V | 24000 pF @ 25 V | - | 8700 pF @ 25 V |
Package protegéieren | Tube | Tube | Tube | Tube |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 220A (Tc) | 245A (Tc) | 23A (Tc) | 24A (Tc) |
Serie | HiPerFET™, Trench | GigaMOS™ | - | HiPerFET™ |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Power Dissipation (Max) | 1090W (Tc) | 1090W (Tc) | 600W (Tc) | 568W (Tc) |
Rds On (Max) @ Id, Vgs | 7.5mOhm @ 60A, 10V | 6.5mOhm @ 60A, 10V | - | 390mOhm @ 12A, 10V |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 378 nC @ 10 V | 400 nC @ 10 V | - | 267 nC @ 10 V |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Package / Case | SOT-227-4, miniBLOC | SOT-227-4, miniBLOC | SOT-227-4, miniBLOC | SOT-227-4, miniBLOC |
Basis Produktnummer | IXFN230 | IXFN260 | IXFN23 | IXFN24 |
Supplier Device Package | SOT-227B | SOT-227B | SOT-227B | SOT-227B |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Vgs (th) (Max) @ Id | 5V @ 8mA | 5V @ 8mA | 5V @ 8mA | 5.5V @ 8mA |
Mounting Type | Chassis Mount | Chassis Mount | Chassis Mount | Chassis Mount |
FET Feature | - | - | - | - |
Eroflueden IXFN230N20T PDF DataDhusts an IXYS Dokumentatioun fir IXFN230N20T - IXYS.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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