IXFK73N30Q Tech Spezifikatioune
IXYS - IXFK73N30Q technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu IXYS - IXFK73N30Q
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | IXYS Corporation | |
Vgs (th) (Max) @ Id | 4V @ 4mA | |
Vgs (Max) | ±30V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-264AA (IXFK) | |
Serie | HiPerFET™, Q Class | |
Rds On (Max) @ Id, Vgs | 45mOhm @ 500mA, 10V | |
Power Dissipation (Max) | 500W (Tc) | |
Package / Case | TO-264-3, TO-264AA | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 5400 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 195 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 300 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 73A (Tc) | |
Basis Produktnummer | IXFK73 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu IXYS IXFK73N30Q.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | IXFK73N30Q | IXFK90N20 | IXFK60N25Q | IXFK80N20 |
Hiersteller | IXYS | IXYS | IXYS | IXYS |
Power Dissipation (Max) | 500W (Tc) | 500W (Tc) | 360W (Tc) | 360W (Tc) |
Vgs (th) (Max) @ Id | 4V @ 4mA | 4V @ 8mA | 4V @ 4mA | 4V @ 4mA |
Serie | HiPerFET™, Q Class | HiPerFET™ | HiPerFET™ | HiPerFET™ |
Input Capacitance (Ciss) (Max) @ Vds | 5400 pF @ 25 V | 9000 pF @ 25 V | 5100 pF @ 25 V | 5900 pF @ 25 V |
Package / Case | TO-264-3, TO-264AA | TO-264-3, TO-264AA | TO-264-3, TO-264AA | TO-264-3, TO-264AA |
Supplier Device Package | TO-264AA (IXFK) | TO-264AA (IXFK) | TO-264AA (IXFK) | TO-264AA (IXFK) |
Gate Charge (Qg) (Max) @ Vgs | 195 nC @ 10 V | 380 nC @ 10 V | 180 nC @ 10 V | 280 nC @ 10 V |
Basis Produktnummer | IXFK73 | IXFK90 | IXFK60 | IXFK80 |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Vgs (Max) | ±30V | ±20V | ±20V | ±20V |
FET Feature | - | - | - | - |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 73A (Tc) | 90A (Tc) | 60A (Tc) | 80A (Tc) |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Rds On (Max) @ Id, Vgs | 45mOhm @ 500mA, 10V | 23mOhm @ 45A, 10V | 47mOhm @ 500mA, 10V | 30mOhm @ 500mA, 10V |
Package protegéieren | Tube | Tube | Tube | Tube |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Entworf fir Source Voltage (Vdss) | 300 V | 200 V | 250 V | 200 V |
Eroflueden IXFK73N30Q PDF DataDhusts an IXYS Dokumentatioun fir IXFK73N30Q - IXYS.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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