IXFK35N50 Tech Spezifikatioune
IXYS - IXFK35N50 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu IXYS - IXFK35N50
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | IXYS Corporation | |
Vgs (th) (Max) @ Id | 4V @ 4mA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-264AA (IXFK) | |
Serie | HiPerFET™ | |
Rds On (Max) @ Id, Vgs | 150mOhm @ 16.5A, 10V | |
Power Dissipation (Max) | 416W (Tc) | |
Package / Case | TO-264-3, TO-264AA | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 5700 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 227 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 500 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 35A (Tc) | |
Basis Produktnummer | IXFK35 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu IXYS IXFK35N50.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | IXFK35N50 | IXFK38N80Q2 | IXFK36N60 | IXFK32N80P |
Hiersteller | IXYS | IXYS | IXYS | IXYS |
Supplier Device Package | TO-264AA (IXFK) | TO-264AA (IXFK) | TO-264AA (IXFK) | TO-264AA (IXFK) |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
FET Feature | - | - | - | - |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Basis Produktnummer | IXFK35 | IXFK38 | IXFK36 | IXFK32 |
Serie | HiPerFET™ | HiPerFET™, Q2 Class | HiPerFET™ | HiPerFET™, Polar |
Vgs (th) (Max) @ Id | 4V @ 4mA | 4.5V @ 8mA | 4.5V @ 8mA | 5V @ 8mA |
Rds On (Max) @ Id, Vgs | 150mOhm @ 16.5A, 10V | 220mOhm @ 19A, 10V | 180mOhm @ 500mA, 10V | 270mOhm @ 16A, 10V |
Package protegéieren | Tube | Tube | Tube | Tube |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Input Capacitance (Ciss) (Max) @ Vds | 5700 pF @ 25 V | 8340 pF @ 25 V | 9000 pF @ 25 V | 8800 pF @ 25 V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 35A (Tc) | 38A (Tc) | 36A (Tc) | 32A (Tc) |
Package / Case | TO-264-3, TO-264AA | TO-264-3, TO-264AA | TO-264-3, TO-264AA | TO-264-3, TO-264AA |
Gate Charge (Qg) (Max) @ Vgs | 227 nC @ 10 V | 190 nC @ 10 V | 325 nC @ 25 V | 150 nC @ 10 V |
Vgs (Max) | ±20V | ±30V | ±20V | ±30V |
Power Dissipation (Max) | 416W (Tc) | 735W (Tc) | 500W (Tc) | 830W (Tc) |
Entworf fir Source Voltage (Vdss) | 500 V | 800 V | 600 V | 800 V |
Eroflueden IXFK35N50 PDF DataDhusts an IXYS Dokumentatioun fir IXFK35N50 - IXYS.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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