IXFH80N08 Tech Spezifikatioune
IXYS - IXFH80N08 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu IXYS - IXFH80N08
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | IXYS Corporation | |
Vgs (th) (Max) @ Id | 4V @ 4mA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-247AD (IXFH) | |
Serie | HiPerFET™ | |
Rds On (Max) @ Id, Vgs | 9mOhm @ 40A, 10V | |
Power Dissipation (Max) | 300W (Tc) | |
Package / Case | TO-247-3 | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 4800 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 180 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 80 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 80A (Tc) | |
Basis Produktnummer | IXFH80 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu IXYS IXFH80N08.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | IXFH80N08 | IXFH75N10Q | IXFH74N20 | IXFH76N07-12 |
Hiersteller | IXYS | IXYS | IXYS | IXYS |
Rds On (Max) @ Id, Vgs | 9mOhm @ 40A, 10V | 20mOhm @ 37.5A, 10V | 30mOhm @ 500mA, 10V | 12mOhm @ 40A, 10V |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Power Dissipation (Max) | 300W (Tc) | 300W (Tc) | 360W (Tc) | 360W (Tc) |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) |
Input Capacitance (Ciss) (Max) @ Vds | 4800 pF @ 25 V | 3700 pF @ 25 V | 5400 pF @ 25 V | 4400 pF @ 25 V |
Entworf fir Source Voltage (Vdss) | 80 V | 100 V | 200 V | 70 V |
Supplier Device Package | TO-247AD (IXFH) | TO-247AD (IXFH) | TO-247AD (IXFH) | TO-247AD (IXFH) |
Gate Charge (Qg) (Max) @ Vgs | 180 nC @ 10 V | 180 nC @ 10 V | 280 nC @ 10 V | 240 nC @ 10 V |
Serie | HiPerFET™ | HiPerFET™ | HiPerFET™ | HiPerFET™ |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Package protegéieren | Tube | Tube | Tube | Tube |
Basis Produktnummer | IXFH80 | IXFH75 | IXFH74 | IXFH76 |
FET Feature | - | - | - | - |
Vgs (th) (Max) @ Id | 4V @ 4mA | 4V @ 4mA | 4V @ 4mA | 3.4V @ 4mA |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Package / Case | TO-247-3 | TO-247-3 | TO-247-3 | TO-247-3 |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 80A (Tc) | 75A (Tc) | 74A (Tc) | 76A (Tc) |
Eroflueden IXFH80N08 PDF DataDhusts an IXYS Dokumentatioun fir IXFH80N08 - IXYS.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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