IXFA20N85XHV Tech Spezifikatioune
IXYS - IXFA20N85XHV technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu IXYS - IXFA20N85XHV
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | IXYS Corporation | |
Vgs (th) (Max) @ Id | 5.5V @ 2.5mA | |
Vgs (Max) | ±30V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-263HV | |
Serie | HiPerFET™, Ultra X | |
Rds On (Max) @ Id, Vgs | 330mOhm @ 500mA, 10V | |
Power Dissipation (Max) | 540W (Tc) | |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 1660 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 63 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 850 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 20A (Tc) | |
Basis Produktnummer | IXFA20 |
ATTRESSIOUN | BESCHREIWUNG |
---|---|
RoHs Status | |
Fiichtegkeet Sensibilitéitsniveau (MSL) | 1 (Unlimited) |
Erreecht Status | REACH Unaffected |
ECCN | EAR99 |
HTSUS |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu IXYS IXFA20N85XHV.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | IXFA20N85XHV | IXFA22N65X2 | IXFA14N60P | IXFA130N10T2 |
Hiersteller | IXYS | IXYS | IXYS | IXYS |
Gate Charge (Qg) (Max) @ Vgs | 63 nC @ 10 V | 38 nC @ 10 V | 36 nC @ 10 V | 130 nC @ 10 V |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Basis Produktnummer | IXFA20 | IXFA22 | IXFA14 | IXFA130 |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Vgs (Max) | ±30V | ±30V | ±30V | ±20V |
Rds On (Max) @ Id, Vgs | 330mOhm @ 500mA, 10V | 160mOhm @ 11A, 10V | 550mOhm @ 7A, 10V | 9.1mOhm @ 65A, 10V |
Power Dissipation (Max) | 540W (Tc) | 390W (Tc) | 300W (Tc) | 360W (Tc) |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Entworf fir Source Voltage (Vdss) | 850 V | 650 V | 600 V | 100 V |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 20A (Tc) | 22A (Tc) | 14A (Tc) | 130A (Tc) |
Supplier Device Package | TO-263HV | TO-263HV | TO-263AA (IXFA) | TO-263AA (IXFA) |
FET Feature | - | - | - | - |
Vgs (th) (Max) @ Id | 5.5V @ 2.5mA | 5.5V @ 1.5mA | 5.5V @ 2.5mA | 4.5V @ 1mA |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) |
Serie | HiPerFET™, Ultra X | HiPerFET™, Ultra X2 | HiPerFET™, Polar | HiPerFET™, TrenchT2™ |
Input Capacitance (Ciss) (Max) @ Vds | 1660 pF @ 25 V | 2310 pF @ 25 V | 2500 pF @ 25 V | 6600 pF @ 25 V |
Package protegéieren | Tube | Tube | Tube | Tube |
Eroflueden IXFA20N85XHV PDF DataDhusts an IXYS Dokumentatioun fir IXFA20N85XHV - IXYS.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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